CED3301_11 CET [Chino-Excel Technology], CED3301_11 Datasheet - Page 3

no-image

CED3301_11

Manufacturer Part Number
CED3301_11
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
1500
1250
1000
750
500
250
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
0
8
6
4
2
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
-V
=-250µA
-V
-25
T
0.5
=V
DS
J
-V
DS
, Junction Temperature( C)
5
GS
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
0
with Temperature
=10,8,6V
1.0
25
10
50
C iss
C oss
C rss
1.5
75
15
2.0
100
20
2.5
125
150
25
3
CED3301/CEU3301
3
10
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
35
28
21
14
2
1
0
-1
7
0
-100
Figure 6. Body Diode Forward Voltage
0.4
-V
Figure 4. On-Resistance Variation
0
I
V
SD
D
Figure 2. Transfer Characteristics
T
GS
Variation with Source Current
=-5.3A
J
-V
=125 C
, Body Diode Forward Voltage (V)
T
=-10V
GS
-50
J
, Junction Temperature( C)
0.6
1
, Gate-to-Source Voltage (V)
with Temperature
25 C
0
2
0.8
50
3
1.0
100
-55 C
4
1.2
150
5
200
1.4
6

Related parts for CED3301_11