CED3301_11 CET [Chino-Excel Technology], CED3301_11 Datasheet - Page 4

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CED3301_11

Manufacturer Part Number
CED3301_11
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
V
Figure 9. Switching Test Circuit
GS
10
8
6
4
2
0
10
10
10
0
V
I
D
0
-1
-2
10
DS
=-5.3A
-2
=-15V
R
GEN
Qg, Total Gate Charge (nC)
Single Pulse
D=0.5
0.2
0.1
0.05
0.02
0.01
Figure 7. Gate Charge
6
V
IN
G
Figure 11. Normalized Thermal Transient Impedance Curve
12
10
S
D
-1
V
DD
R
L
18
Square Wave Pulse Duration (msec)
V
10
OUT
0
24
CED3301/CEU3301
4
10
V
V
t
1
d(on)
OUT
IN
10%
Figure 10. Switching Waveforms
10
10
10
10
2
1
0
-1
t
50%
10
on
10%
10
-1
Single Pulse
R
2
T
T
DS(ON)
PULSE WIDTH
-V
C
J
=150 C
=25 C
90%
t
DS
r
INVERTED
Figure 8. Maximum Safe
Limit
, Drain-Source Voltage (V)
P
1. R
2. R
3. T
4. Duty Cycle, D=t1/t2
DM
t
Operating Area
d(off)
10
JM-
θJC
θJC
0
T
t
1
=See Datasheet
C
10
(t)=r (t) * R
50%
= P* R
t
2
3
DC
10ms
90%
θJC
1ms
t
10%
off
θJC
10
90%
100µs
(t)
1
t
f
10
4
10
2

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