CEB62A3 CET [Chino-Excel Technology], CEB62A3 Datasheet - Page 2

• Manufacturer Part Number: CEB62A3
• Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

4
ELECTRICAL CHARACTERISTICS (T
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Output Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Gate-Drain Charge
OFF CHARACTERISTICS
Drain-Source On-State Resistance
On-State Drain Current
Input Capacitance
Turn-Off Delay Time
Total Gate Charge
Gate-Source Charge
Reverse Transfer Capacitance
Rise Time
Fall Time
CEP62A3/CEB62A3
Parameter
a
b
b
Symbol
R
V
BV
t
I
t
D(OFF)
C
I
I
DS(ON)
D(ON)
C
C
GS(th)
D(ON)
g
Q
Q
DSS
GSS
Q
OSS
RSS
t
t
FS
ISS
DSS
r
f
gs
gd
g
4-178
C
=25 C unless otherwise noted)
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
f =1.0MH
D
GS
DS
DS
GS
GS
GS
GS
DS
DS
DD
GEN
DS
GS
G
=60A,
=24Ω
Condition
= 0V, I
= V
= 30V, V
= 10V, I
=15V, V
= 20V, V
= 10V, I
= 4.5V, I
= 10V, V
=15V
=10V
= 15V,
= 10V
GS
,
, I
Z
D
I
D
D
D
D
= 250µA
GS
GS
D
DS
= 250µA
= 30A
= 26A
= 26A
= 21A
DS
= 0V
= 0V
= 5V
= 0V
,
Min Typ Max Unit
60
30
1
1100
600
180
8.5
12
35
36
36
97
68
19
11
6
175
135
10
15
100 nA
48
72
42
1
3
µA
mΩ
mΩ
P
P
ns
ns
nC
nC
nC
P
ns
V
S
ns
V
A
F
F
F