CEB62A3 CET [Chino-Excel Technology], CEB62A3 Datasheet - Page 4

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CEB62A3

Manufacturer Part Number
CEB62A3
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
4
CEP62A3/CEB62A3
Figure 7. Transconductance Variation
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
Figure 5. Gate Threshold Variation
50
40
30
20
10
10
0
8
6
4
2
0
-50 -25
0
0
V
I
D
I
DS
Tj, Junction Temperature ( C)
DS
=30A
Figure 9. Gate Charge
=15V
with Drain Current
Qg, Total Gate Charge (nC)
, Drain-Source Current (A)
10
0
with Temperature
10
25 50
20
20
75 100 125 150
V
I
D
30
DS
=250 A
30
=V
V
DS
GS
=10V
40
40
4-180
Figure 6. Breakdown Voltage Variation
Figure 8. Body Diode Forward Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
10
10
10
10
1.0
0.1
50
10
-1
-50 -25
1
0
2
10
0.4
-1
Single Pulse
Figure 10. Maximum Safe
I
V
Tj, Junction Temperature ( C)
D
T
Tj=175 C
Variation with Source Current
=250 A
SD
C
with Temperature
=25 C
0.6
, Body Diode Forward Voltage (V)
V
DS
0
, Drain-Source Voltage (V)
10
25
0
0.8
Operating Area
50
1.0
75 100 125 150
10
1
1.2
1.4
10
2

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