CEB62A3 CET [Chino-Excel Technology], CEB62A3 Datasheet - Page 3

• Manufacturer Part Number: CEB62A3
• Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

ELECTRICAL CHARACTERISTICS (T
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Notes
b.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
Parameter
1800
1500
1200
60
50
40
30
20
10
900
600
300
0
Figure 1. Output Characteristics
0
0
0
V
V
DS
DS
Figure 3. Capacitance
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
5
1
V
10
GS
=10,8,6,4V
2
15
3
20
Ciss
CEP62A3/CEB62A3
Coss
Crss
Symbol
4
V
25
SD
C
=25 C unless otherwise noted)
5
30
4-179
a
V
GS
Condition
Figure 4. On-Resistance Variation with
= 0V, Is =26A
2.2
1.9
1.6
1.3
1.0
0.7
0.4
50
40
60
30
20
10
0
-100
Figure 2. Transfer Characteristics
1
V
I
GS
D
=26A
V
=10V
-50
GS
Tj=125 C
T
, Gate-to-Source Voltage (V)
J
, Junction Temperature( C)
2
0
Temperature
25 C
50
Min Typ Max Unit
100
3
-55 C
150
4
200
1.3
V
4