CEU730G CET [Chino-Excel Technology], CEU730G Datasheet - Page 2

• Manufacturer Part Number: CEU730G
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
.
Parameter
b
c
c
b
T c = 25 C unless otherwise noted
R
Symbol
V
BV
t
t
C
V
C
Q
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
g
I
GSSF
Q
GSSR
t
I
DSS
t
SD
oss
iss
FS
rss
gd
r
f
gs
S
g
DSS
f
CED730G/CEU730G
2
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 400V, V
= 30V, V
= -30V, V
= V
= 10V, I
= 50V, I
= 25V, V
= 200V, I
= 10V, R
= 320V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
= 250 µ A
= 3A
GS
GEN
D
D
DS
DS
= 5A
= 250 µ A
= 3A
GS
= 3.5A,
=3.5A,
= 0V,
= 0V
= 0V
=12Ω
= 0V
Min
400
2
Typ
590
105
0.8
2.5
20
15
30
14
6
7
5
6
Max
-100
100
1.5
10
30
14
60
10
18
4
1
5
Units
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
A
V