CEU730G CET [Chino-Excel Technology], CEU730G Datasheet - Page 3

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CEU730G

Manufacturer Part Number
CEU730G
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
900
750
600
450
300
150
12
10
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
8
6
4
2
0
0
-50
0
Figure 5. Gate Threshold Variation
C rss
V
V
I
D
Figure 1. Output Characteristics
DS
GS
=250µA
V
V
-25
T
=V
=10,9,8,7V
DS
DS
J
2
, Junction Temperature( C)
5
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
C iss
C oss
Figure 3. Capacitance
0
with Temperature
4
25
10
50
6
15
75
8
100
20
10
125
25
12
150
CED730G/CEU730G
3
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
12
10
0
-1
-2
8
6
4
2
0
Figure 6. Body Diode Forward Voltage
-100
0.4
1
V
Figure 4. On-Resistance Variation
SD
I
V
Figure 2. Transfer Characteristics
D
GS
Variation with Source Current
=3A
V
, Body Diode Forward Voltage (V)
T
=10V
GS
-50
J
, Junction Temperature( C)
0.6
2
, Gate-to-Source Voltage (V)
T
J
with Temperature
=125C
0
0.8
3
25 C
50
1.0
4
100
-55 C
1.2
5
150
200
1.4
6

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