CEU730G CET [Chino-Excel Technology], CEU730G Datasheet - Page 4

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CEU730G

Manufacturer Part Number
CEU730G
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
V
Figure 9. Switching Test Circuit
GS
10
8
6
4
2
0
0
V
I
D
DS
10
10
10
=3.5A
=320V
0
-1
-2
10
R
-5
GEN
Qg, Total Gate Charge (nC)
4
Figure 7. Gate Charge
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
V
IN
G
Figure 11. Normalized Thermal Transient Impedance Curve
8
10
S
D
-4
V
DD
R
12
L
Square Wave Pulse Duration (sec)
V
10
16
OUT
-3
CED730G/CEU730G
4
10
V
V
t
d(on)
-2
OUT
IN
10%
Figure 10. Switching Waveforms
10
10
10
10
2
1
0
-1
10
t
50%
on
Single Pulse
R
0
10%
10
T
T
DS(ON)
C
J
=150 C
-1
=25 C
PULSE WIDTH
V
90%
t
DS
Figure 8. Maximum Safe
r
INVERTED
Limit
, Drain-Source Voltage (V)
P
10
1. R
2. R
3. T
4. Duty Cycle, D=t1/t2
Operating Area
t
DM
d(off)
DC
1
JM-
θJC
θJC
10ms
t
T
1
=See Datasheet
C
10
50%
(t)=r (t) * R
= P* R
1ms
t
2
0
90%
100ms
10
t
θJC
10%
off
90%
2
θJC
(t)
t
f
10
1
10
3
4

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