P4C1298 PYRAMID [Pyramid Semiconductor Corporation], P4C1298 Datasheet - Page 2

• Manufacturer Part Number: P4C1298
• Description: ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

MAXIMUM RATINGS
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
Document # SRAM135 REV OR
Symbol
Symbol
V
V
T
Grade(2)
Military
Industrial
Commercial
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
CC
TERM
A
V
V
V
V
V
V
I
V
I
I
I
SB1
LO
HC
LI
SB
CD
OL
OH
LC
IH
P4C1298/L
IL
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current (TTL Input Levels)
Standby Power Supply
Current
(CMOS Input Levels)
–40°C to +85°C
Parameter
-55°C to +125°C
Temperature
0°C to +70°C
Ambient
Parameter
(1)
GND
0V
0V
0V
–55 to +125
–0.5 to +7
V
–0.5 to
CE
V
V
V
I
Value
I
V
V
CE
V
Open
V
V
CC
OL
OH
CC
IN
CC
CC
IN
CC
CC
OUT
= +8 mA, V
= –4 mA, V
= GND to V
+0.5
= Max., f = 0, Outputs Open
= Min., I
= Max ., f = Max., Outputs
= Max.
= Max., CE = V
5.0V ± 10%
= GND to V
5.0V ± 10%
5.0V ± 10%
V
V
V
HC
LC
IH
Test Conditions
or V
V
CC
IN
IN
= 18 mA
Unit
CC
CC
°C
CC
V
V
= Min.
CC
= Min.
V
HC
IH
2. Extended temperature operation guaranteed with 400 linear feet per
3. Transient inputs with V
4. This parameter is sampled and not 100% tested.
CAPACITANCES
V
Symbol
C
C
(2)
Symbol
T
T
P
I
OUT
CC
minute of air flow.
–100mA, respectively, are permissible for pulse widths up to 20 ns.
BIAS
STG
T
IN
OUT
= 5.0V, T
Ind/Comm
Ind/Comm
Input Capacitance
Output Capacitance
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
Mil
Mil
A
Parameter
= 25°C, f = 1.0MHz
Parameter
V
–0.5
–0.5
CC
Min
___
___
___
___
2.2
2.4
–5
–5
P4C1298
–0.2
IL
(4)
(3)
(3)
and I
V
V
IL
Max
CC
CC
–1.2
not more negative than –3.0V and
0.4
0.8
0.2
+5
+5
40
20
10
10
+0.5
+0.5
Conditions
V
V
OUT
V
IN
–0.5
–0.5
CC
Min
–10
–10
___
___
___
___
2.2
2.4
P4C1298L
–55 to +125
–65 to +150
= 0V
–0.2
= 0V
(3)
(3)
Value
1.0
50
V
V
Page 2 of 11
Max
CC
CC
–1.2
N/A
Typ.
0.8
0.2
+10
N/A
+10
10
0.4
20
+0.5
+0.5
5
7
Unit
Unit
Unit
mA
pF
pF
mA
mA
mA
mA
µA
µA
°C
°C
W
V
V
V
V
V
V
V