P4C1298 PYRAMID [Pyramid Semiconductor Corporation], P4C1298 Datasheet - Page 6

• Manufacturer Part Number: P4C1298
• Description: ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

AC CHARACTERISTICS - WRITE CYCLE
(V
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
Notes:
10. OE is LOW for this WRITE cycle.
11. If CE goes HIGH simultaneously with WE HIGH, the output remains
Document # SRAM135 REV OR
9. CE and WE must be LOW for WRITE cycle.
Sym
t
t
t
t
t
t
t
t
CC
t
t
WC
CW
DW
OW
AW
WP
DH
WZ
AS
AH
in a high impedance state.
= 5V ± 10%, All Temperature Ranges)
P4C1298/L
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time from End of Write
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
Parameter
(2)
Min
15
10
10
10
0
0
9
0
0
-15
Max
7
WE
WE
WE
WE CONTROLLED)
12. Write Cycle Time is measured from the last valid address to the first
13. Transition is measured ±200mV from steady state voltage prior to
Min
transition address.
change with specified loading in Figure 1. This parameter is
sampled and not 100% tested.
20
15
15
15
10
0
0
0
0
-20
Max
10
Min
25
20
20
20
15
0
0
0
0
-25
Max
15
(9)
Min
35
25
25
25
20
0
0
0
0
-35
Max
20
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Min
45
30
30
30
20
0
0
0
0
-45
Max
20