MA3X704E PANASONIC [Panasonic Semiconductor], MA3X704E Datasheet
MA3X704E
Manufacturer Part Number
MA3X704E
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.MA3X704E.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA3X704E0L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA3X704D, MA3X704E
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
Note) * : Value per chip
• Two MA3X704As are contained in one package
• Low forward rise voltage (V
• Small tmperature coefficient of forward characteristic
• Extremely low reverse current I
Reverse voltage (DC) MA3X704D/E
Peak forward
current
Forward current
(DC)
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
efficiency (η)
2. Rated input/output frequency: 2 000 MHz
3. * : t
human body and the leakage of current from the operating equipment
Parameter
Parameter
rr
measuring instrument
Single
Double
Single
Double
*
*
*
F
) and satisfactory wave detection
Pulse Generator
(PG-10N)
R
Symbol
s
R
= 50 Ω
I
T
V
I
T
FM
stg
F
R
a
j
Symbol
= 25°C
V
V
Bias Application Unit N-50BU
C
a
I
t
η
R
rr
F1
F2
A
t
= 25°C
−55 to +125
Rating
W.F.Analyzer
(SAS-8130)
R
150
110
125
i
30
30
20
= 50 Ω
V
I
I
V
I
I
V
R
F
F
F
rr
L
R
R
in
= 1 mA
= 30 mA
= I
= 1 mA, R
= 30 V
= 1 V, f = 1 MHz
= 3.9 kΩ, C
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
Conditions
L
, f = 30 MHz
= 100 Ω
L
V
= 10 pF
R
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol
• MA3X704D : M2P • MA3X704E : M2R
Internal Connection
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3pin)
t
1
2
I
F
I
I
R
0.65 ± 0.15
Output Pulse
F
R
0.1 to 0.3
0.4 ± 0.2
L
= 10 mA
= 10 mA
= 100 Ω
D
t
I
rr
rr
Min
= 1 mA
1
2
t
3
1.5
2.8
Typ
1.5
1.0
65
+ 0.25
− 0.05
1 Cathode
2 Cathode
3 Anode
+ 0.2
− 0.3
1
2
MA3X704D MA3X704E
Max
0.4
1.0
1
3
E
0.65 ± 0.15
Unit : mm
Cathode
Anode
Anode
Unit
µA
pF
ns
%
3
V
V
1
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MA3X704E Summary of contents
Page 1
... 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.5 − 0. 0.1 to 0.3 0.4 ± 0.2 MA3X704D MA3X704E JEDEC : TO-236 1 Cathode EIAJ : SC-59 2 Cathode Mini Type Package (3pin) 3 Anode Marking Symbol • MA3X704D : M2P • MA3X704E : M2R Internal Connection Min Typ Max 0.4 1.0 1.5 1.0 65 Output Pulse ...
Page 2
... MA3X704D, MA3X704E 75°C 25° 125°C − 20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F MHz = 25° Reverse voltage Schottky Barrier Diodes (SBD) T ...