Q67060-S6160 INFINEON [Infineon Technologies AG], Q67060-S6160 Datasheet - Page 9

• Manufacturer Part Number: Q67060-S6160
• Description: High Current PN Half Bridge NovalithIC 43 A, 7 m? + 9 m?
• Manufacturer: INFINEON [Infineon Technologies AG]

4.2
The power stages of the BTS 7960 consist of a p-channel vertical DMOS transistor for
the high side switch and a n-channel vertical DMOS transistor for the low side switch. All
protection and diagnostic functions are located in a separate top chip. Both switches can
be operated up to 25 kHz, allowing active freewheeling and thus minimizing power
dissipation in the forward operation of the integrated diodes.
The on state resistance
junction temperature
Figure 4.
Figure 4
Data Sheet
High Side Switch
R
ON(HS)
m
20
25
10
15
5
4
Power Stages
8
Typical On State Resistance vs. Supply Voltage
12
T
16
j
. The typical on state resistance characteristics are shown in
R
ON
20
T
T
is dependent on the supply voltage
j
T
j
= 150°C
j
= -40°C
= 25°C
V
24
S
V
28
8
Low Side Switch
R
ON(LS)
Block Description and Characteristics
m
20
25
10
15
5
4
High Current PN Half Bridge
8
12
V
16
S
Rev. 1.1, 2004-12-07
as well as on the
20
T
T
j
T
= 150°C
j
j
= -40°C
= 25°C
V
BTS 7960
S
24
V
28