K9F6408Q0C-H SAMSUNG [Samsung semiconductor], K9F6408Q0C-H Datasheet - Page 19

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K9F6408Q0C-H

Manufacturer Part Number
K9F6408Q0C-H
Description
8M x 8 Bit Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
Status Read Cycle
READ1 OPERATION
K9F6408Q0C
K9F6408U0C
CLE
CE
WE
ALE
RE
I/O
R/B
CLE
CE
WE
RE
I/O
0
0
~
~
7
7
00h or 01h A
t
WC
Column
Address
0
~ A
(READ ONE PAGE)
7
A
9
~ A
Page(Row)
Address
16
t
CLS
t
A
CS
17
~ A
t
t
24
WP
t
WB
DS
70h
Busy
t
t
RR
R
t
t
t
t
AR2
CH
CLH
DH
On K9F6408U0C_T,Q or K9F6408U0C_V,F
CE must be held
low during tR
Dout N
19
NOTES : 1) is only valid on K9F6408U0C_T,Q or K9F6408U0C_V,F
Dout N+1
t
WHR
t
RC
t
CLR
t
Dout N+2
IR
t
CSTO
t
RSTO
Dout N+3
FLASH MEMORY
Status Output
t
t
t
RHZ*
CHZ*
t
OH
OH
1)
Dout 527
1)
t
t
RHZ
OH
t
t
OH
RB
t
CHZ
t
CEH
t
CRY

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