MAX1077ETC-T Maxim Integrated, MAX1077ETC-T Datasheet - Page 2

• Manufacturer Part Number: MAX1077ETC-T
• Description: Analog to Digital Converters - ADC
• Manufacturer: Maxim Integrated

Specifications of MAX1077ETC-T

• Number Of Channels: 1
• Architecture: SAR
• Conversion Rate: 1500 KSPs
• Resolution: 10 bit
• Input Type: Differential
• Snr: No
• Interface Type: 3-Wire (SPI, Microwire), QSPI
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TQFN EP
• Maximum Power Dissipation: 1349 mW
• Minimum Operating Temperature: - 40 C
• Number Of Converters: 1
• Voltage Reference: Internal 2.048 V or External

ABSOLUTE MAXIMUM RATINGS
V
V
Digital Inputs
Digital Output
Analog Inputs and
RGND to GND .......................................................-0.3V to +0.3V
1.5Msps, Single-Supply, Low-Power, True-
Differential, 10-Bit ADCs with Internal Reference
ELECTRICAL CHARACTERISTICS
(V
at T
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
DC ACCURACY
Resolution
Relative Accuracy
Differential Nonlinearity
Offset Error
Offset-Error Temperature
Coefficient
Gain Error
Gain Temperature Coefficient
DYNAMIC SPECIFICATIONS (f
Signal-to-Noise Plus Distortion
Total Harmonic Distortion
Spurious-Free Dynamic Range
Intermodulation Distortion
Full-Power Bandwidth
Full-Linear Bandwidth
CONVERSION RATE
Minimum Conversion Time
Maximum Throughput Rate
M i ni m um Thr oug hp ut Rate
Track-and-Hold Acquisition Time
Aperture Delay
Aperture Jitter
External Clock Frequency
DD
L
DD
to GND .................-0.3V to the lower of (V
to GND ....................-0.3V to the lower of (V
REF to GND..........-0.3V to the lower of (V
to GND ................-0.3V to the lower of (V
A
_______________________________________________________________________________________
to GND ..............................................................-0.3V to +6V
= +2.7V to +3.6V, V
= +25°C.)
PARAMETER
L
= V
DD
IN
, f
= 525kHz sine wave, V
SCLK
SYMBOL
SINAD
t
SFDR
f
CONV
t
DNL
THD
SCLK
IMD
INL
ACQ
= 24MHz, 50% duty cycle, T
DD
DD
DD
L
+ 0.3V) and +6V
+ 0.3V) and +6V
+ 0.3V) and +6V
+ 0.3V) and +6V
(Note 1)
(Note 2)
Offset nulled
Up to the 5th harmonic
f
-3dB point, small-signal method
S/(N + D) > 56dB, single ended
(Note 3)
( N ote 4)
(Note 5)
(Note 6)
(Note 7)
IN1
= 250kHz, f
IN
= V
REF
CONDITIONS
IN2
, unless otherwise noted.)
= 300kHz
Maximum Current into Any Pin............................................50mA
Continuous Power Dissipation (T
Operating Temperature Range
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
A
= -40°C to +85°C, unless otherwise noted. Typical values are
12-Pin TQFN (derate 16.9mW/°C above +70°C) ......1349mW
MAX107_ ETC.................................................-40°C to +85°C
MIN
-0.5
-0.5
1.5
10
60
10
A
= +70°C)
TYP
125
-80
-80
-78
1.2
±1
±2
61
15
30
5
0.667
MAX
+0.5
+0.5
-74
-74
±2
±2
24
ppm/°C
ppm/°C
UNITS
Msps
MHz
MHz
ksps
MHz
LSB
LSB
LSB
LSB
Bits
dB
dB
dB
dB
µs
ns
ns
ps