M24C32-DFMC6TG STMicroelectronics, M24C32-DFMC6TG Datasheet - Page 26
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M24C32-DFMC6TG
Manufacturer Part Number
M24C32-DFMC6TG
Description
EEPROM 32 Kbit I2C EEProm 4kB 2.5V to 5.5V
Manufacturer
STMicroelectronics
Datasheet
1.M24C32-FDW6TP.pdf
(40 pages)
Specifications of M24C32-DFMC6TG
Rohs
yes
DC and AC parameters
26/40
Table 14.
1. Only for devices operating at f
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
4. The new M24C32-W devices (identified by the process letter K) offer I
5. 5 µA for previous devices identified by process letter A.
Symbol
I
I
V
I
V
I
CC0
CC1
V
completion of the internal write cycle t
I
CC
LO
LI
OL
IH
IL
Input leakage current
(SCL, SDA, E2, E1,
E0)
Output leakage
current
Supply current (Read)
Supply current (Write) During t
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24C32-W, device grade 6)
Parameter
C
max = 1 MHz (see note
Doc ID 4578 Rev 21
V
device in Standby mode
SDA in Hi-Z, external voltage applied
on SDA: V
2.5 V < V
(rise/fall time < 50 ns)
2.5 V < V
(rise/fall time < 50 ns)
Device not selected
V
Device not selected
V
I
I
OL
OL
IN
CC
CC
M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF
W
= 2.1 mA, V
= 3 mA, V
= V
, V
, V
Test conditions (see
(t
W
CC
CC
SS
W
is triggered by the correct decoding of a Write instruction).
CC
CC
, 2.5 V < V
= 2.5 V
= 5.5 V
or V
SS
< 5.5 V, f
< 5.5 V, f
or V
CC
CC
CC
= 5.5 V
CC
(1)
= 2.5 V or
(3)
(3)
CC
in
c
c
, V
, V
= 400 kHz
= 1 MHz
Table
< 5.5 V
IN
IN
Table
= V
= V
19)
SS
SS
(1)
CC1
6)
or
or
= 3µA (max)
0.7 V
0.7 V
–0.45
Min.
CC
CC
V
0.3 V
5
CC
Max.
5
± 2
± 2
2.5
(4)(5)
6.5
0.4
2
2
(2)
+0.6
CC
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V
V