M24256-BFDW6TP STMicroelectronics, M24256-BFDW6TP Datasheet - Page 25

• Manufacturer Part Number: M24256-BFDW6TP
• Description: EEPROM 256 Kbit EEPROM Three Chip Enable
• Manufacturer: STMicroelectronics

Specifications of M24256-BFDW6TP

• Product Category: EEPROM
• Rohs: yes

M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Table 13.
1. Only for devices operating at f
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
I
CC0
CC1
V
completion of the internal write cycle t
I
CC
LO
LI
OL
IH
IL
Input leakage current
(SCL, SDA, E2, E1,
E0)
Output leakage
current
Supply current (Read)
Supply current (Write) During t
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24256-BW, device grade 6)
Parameter
C
max = 1 MHz (see
Doc ID 6757 Rev 30
V
mode
SDA in Hi-Z, external voltage applied
on SDA: V
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
2.5 V < V
(rise/fall time < 50 ns)
Device not selected
V
Device not selected
V
I
I
Test conditions (in addition to those
OL
OL
IN
CC
CC
CC
CC
W
= 2.1 mA, V
= 3 mA, V
= V
, V
, V
= 2.5 V, f
= 5.5 V, f
(t
W
CC
CC
SS
W
is triggered by the correct decoding of a Write instruction).
CC
, 2.5 V < V
= 2.5 V
= 5.5 V
or V
SS
< 5.5 V, f
or V
c
c
CC
in
CC
Table
= 400 kHz
= 400 kHz
CC
, device in Standby
Table
= 5.5 V
CC
= 2.5 V or
(3)
(3)
CC
17).
, V
, V
c
6)
= 1 MHz
< 5.5 V
IN
IN
= V
= V
SS
SS
(1)
or
or
DC and AC parameters
0.7 V
0.7 V
–0.45
Min.
-
-
-
-
-
-
-
-
-
CC
CC
V
0.3 V
CC
Max.
2
± 2
± 2
2.5
6.5
0.4
1
2
2
3
(2)
+0.6
CC
25/40
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V