BD25HC5WEFJ-E2 ROHM Semiconductor, BD25HC5WEFJ-E2 Datasheet - Page 14

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BD25HC5WEFJ-E2

Manufacturer Part Number
BD25HC5WEFJ-E2
Description
Low Dropout Controllers - LDO LDO RegPos 1.5V 2.5A 1.5A
Manufacturer
ROHM Semiconductor
Datasheet

Specifications of BD25HC5WEFJ-E2

Rohs
yes
Input Voltage Max
8 V
Output Voltage
2.5 V
Output Current
1.5 A
Output Type
Fixed
Number Of Outputs
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
HTSOP-8
Input Voltage Min
4.5 V
Maximum Power Dissipation
2110 mW
Minimum Operating Temperature
- 25 C
●Evaluation Board Circuit
●Evaluation Board Parts List
●Board Layout
TSZ22111・15・001
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
BDxxHC5WEFJ
Designation
・Input capacitor C
・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as
・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
・For output voltage setting(BD00HC5WEFJ)
Output capacitor C
please use several through hole.
possible. Please be careful in wiring drawing
Output voltage can be set by FB pin voltage(0.800V typ.)and external resistance R1, R2.
R1
R2
R3
R4
R5
R6
C1
C2
C3
(The use of resistors with R1+R2=1k to 90k is recommended)
V
O
= V
8.2kΩ
43kΩ
Value
1μF
FB
IN
×
C6
C5
C7
of V
OUT
CC
R1+R2
MCR01PZPZF4302
MCR01PZPZF8201
also should be placed close to IC pin as possible. In case connected to inner layer GND plane,
CM105B105K16A
R2
V
(V
O
V
IN
CC
) should be placed very close to V
Part No.
(
GND
V
IN
)
V
O
R 1
C
IN
R1
R2
KYOCERA
C
Company
OUT
ROHM
ROHM
R2
1
2
EN
3
4
FB
14/19
GND
N.C.
V
GND
O
Designation
FIN
U1
CC
C10
C4
C5
C6
C7
C8
C9
U1
U2
(V
IN
N.C
N.C
V
EN
) pin as possible, and used broad wiring pattern.
CC
7
5
8
6
Value
1μF
SW1
CM105B105K16A
BD00HC5WEFJ
TSZ02201-0R6R0A600210-1-2
Part No.
C3
C2
C1
EN
25.July.2012 Rev.001
Datasheet
KYOCERA
Company
ROHM

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