L6564TD STMicroelectronics, L6564TD Datasheet - Page 11

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L6564TD

Manufacturer Part Number
L6564TD
Description
Power Factor Correction ICs 10-Pin Trans Mode PFC Bi 6mA 0.75W
Manufacturer
STMicroelectronics
Datasheet

Specifications of L6564TD

Rohs
yes
Maximum Power Dissipation
0.75 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOP-10
Minimum Operating Temperature
- 40 C

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L6564T
Table 4.
1. Parameters tracking each other.
2. The multiplier output is given by:
3. Parameters tracking each other.
Voltage feedforward
Zero current detector
Gate driver
Symbol
V
R
I
I
∆V
∆V
V
V
V
V
ZCDsnk
I
ZCDsrc
I
V
I
Oclamp
V
V
ZCDb
V
snkpk
DISCH
V
ZCDH
srcpk
ZCDA
ZCDT
ZCDL
∆V
VFF
DIS
OH
t
t
EN
OL
VFF
VFF
f
r
Linear operation range
Dropout V
Line drop detection thresh.
Line drop detection thresh.
Internal discharge resistor
Disable threshold
Enable threshold
Upper clamp voltage
Lower clamp voltage
Arming voltage
(positive-going edge)
Triggering voltage
(negative-going edge)
Input bias current
Source current capability
Sink current capability
Output low voltage
Output high voltage
Peak source current
Peak sink current
Voltage fall time
Voltage rise time
Output clamp voltage
UVLO saturation
Electrical characteristics (continued)
MULTpk
Parameter
-V
VFF
V
cs
=
V
CS_Ofst
+
K
Doc ID 022671 Rev 1
M
Vcc < Vcc
Vcc > or = to Vcc
Below peak value
Below peak value Tj =25°C
Tj = 25 °C
(2)
(2)
I
I
V
I
I
I
Vcc= 0 to V
ZCD
ZCD
sink
source
source
ZCD
V
MULT
Voltage falling
Voltage rising
= 100 mA
= 2.5 mA
= - 2.5 mA
= 1 to 4.5 V
= 5 mA
= 5 mA; Vcc = 20 V
(
V
V
VFF
COMP
2
On
CCon
Test condition
, I
2
On
5 .
sink
)
= 2 mA
Electrical characteristics
0.725 0.8 0.875
0.845 0.88 0.915
Min. Typ. Max. Unit
-0.3
-2.0
-0.6
7.5
5.0
1.1
0.5
2.0
9.5
0.8
30
50
10
1
5
10.3
5.7
1.4
0.7
0.6
70
70
10
30
45
12
-4
0
5
12.5
850
110
150
0.3
1.9
1.4
1.2
20
90
20
60
15
3
1
1
11/33
mV
mV
mV
mA
mA
µA
kΩ
ns
ns
V
V
V
V
V
V
V
V
V
A
A
V
V

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