AT28C64B-15PU Atmel, AT28C64B-15PU Datasheet - Page 5

• Manufacturer Part Number: AT28C64B-15PU
• Description: IC EEPROM 64KBIT 150NS 28DIP
• Manufacturer: Atmel

Specifications of AT28C64B-15PU

• Format - Memory: EEPROMs - Parallel
• Memory Type: EEPROM
• Memory Size: 64K (8K x 8)
• Speed: 150ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-DIP (0.600", 15.24mm)
• Organization: 8 K x 8
• Interface Type: Parallel
• Access Time: 150 ns
• Output Enable Access Time: 70 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 40 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 5 V
• Capacitance, Input: 4 pF
• Capacitance, Output: 8 pF
• Current, Input, Leakage: 10 μA
• Current, Operating: 40 mA
• Current, Output, Leakage: 10
• Data Retention: 10 yrs.
• Density: 64K
• Package Type: PDIP
• Power Dissipation: 220 mW
• Temperature, Operating: -40 to +85 °C
• Time, Access: 150 ns
• Time, Address Hold: 50
• Voltage, Input, High: 2 V
• Voltage, Input, Low: 0.8 V
• Voltage, Output, High: 2.4 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 5 V
• Memory Configuration: 8K X 8
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: DIP
• No. Of Pins: 28
• Rohs Compliant: Yes
• Operating Temperature Range: -40°C
• Ic Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5. DC and AC Operating Range
6. Operating Modes
Notes:
7. Absolute Maximum Ratings*
8. DC Characteristics
0270L–PEEPR–2/09
Operating Temperature (Case)
V
Mode
Read
Write
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
Chip Erase
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
Symbol
I
I
I
I
I
V
V
V
V
LI
LO
SB1
SB2
CC
CC
IL
IH
OL
OH
Power Supply
(2)
1. X can be V
2.
3. V
See “AC Write Waveforms” on page 8.
H
Parameter
Input Load Current
Output Leakage Current
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
= 12.0V
CC
CC
CC
Active Current
Standby Current CMOS
Standby Current TTL
IL
±
or V
0.5V.
IH
.
CC
Condition
V
V
CE = V
CE = 2.0V to V
f = 5 MHz; I
I
I
OL
OH
CE
V
V
V
V
IN
I/O
X
X
X
IL
IL
IH
IL
+ 0.6V
= 2.1 mA
= -400 µA
= 0V to V
= 0V to V
CC
- 0.3V to V
OUT
CC
CC
CC
= 0 mA
+ 1V
*NOTICE:
+ 1V
CC
V
OE
V
V
+ 1V
V
X
V
X
H
IL
IH
(1)
IL
IH
(3)
AT28C64B-15
-40°C - 85°C
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
5V ±10%
Min
2.0
2.4
WE
V
V
V
V
X
X
X
IH
IH
IL
IL
Max
0.40
AT28C64B
100
0.8
10
10
40
2
High Z
High Z
High Z
D
I/O
D
OUT
IN
Units
mA
mA
µA
µA
µA
V
V
V
V
5