BR93L46RF-WE2 Rohm Semiconductor, BR93L46RF-WE2 Datasheet - Page 7

IC EEPROM 1KBIT 2MHZ 8SOP

BR93L46RF-WE2

Manufacturer Part Number
BR93L46RF-WE2
Description
IC EEPROM 1KBIT 2MHZ 8SOP
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of BR93L46RF-WE2

Memory Size
1K (64 x 16)
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Speed
2MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOP
Clock Frequency
2MHz
Supply Voltage Range
1.8V To 5.5V
Memory Case Style
SOP
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC (18-Jun-2010)
Package /
RoHS Compliant
Organization
64 K x 16
Interface Type
Microwire
Maximum Clock Frequency
2 MHz
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Memory Configuration
64 X 16
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BR93L46RF-WE2
BR93L46RF-WE2TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BR93L46RF-WE2
Manufacturer:
ROHM
Quantity:
9 385
Part Number:
BR93L46RF-WE2
Manufacturer:
ROHM
Quantity:
2 360
Company:
Part Number:
BR93L46RF-WE2
Quantity:
5 900
Company:
Part Number:
BR93L46RF-WE2
Quantity:
9 000
Technical Note
BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series
●BR93L□□-W Characteristic data (The following characteristic data are Typ. values.)
Fig.17
Fig.18
Fig.19 SK frequency fSK
Consumption current at WRAL action
Consumption current at standby action ISB
ICC3 (WRAL, fSK=500kHz)
Fig.20
Fig.21
Fig.22 CS low time tCS
SK high time tSKH
SK low time tSKL
Fig.23
Fig.24
Fig.25
CS hold time tCSH
CS setup time tCSS
DI hold time tDIH
Fig.26
Fig.27
Fig.28
DI setup time tDIS
Data “0” output delay time tPD0
Output data “1” delay time tPD1
Fig.29
Fig.30
Fig.31
Time from CS to output establishment tSV
Time from CS to High-Z tDF
Write cycle time tE/W
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2011.02 - Rev.F
7/40
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