BR24L01AF-WE2 Rohm Semiconductor, BR24L01AF-WE2 Datasheet - Page 29
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BR24L01AF-WE2
Manufacturer Part Number
BR24L01AF-WE2
Description
IC EEPROM 1KBIT 400KHZ 8SOP
Manufacturer
Rohm Semiconductor
Specifications of BR24L01AF-WE2
Memory Size
1K (128 x 8)
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOP
Clock Frequency
400kHz
Supply Voltage Range
1.8V To 5.5V
Memory Case Style
SOP
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC (18-Jun-2010)
Package /
RoHS Compliant
Memory Configuration
128 X 8
Interface Type
I2C, Serial
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BR24L01AF-WE2TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BR24L01AF-WE2
Manufacturer:
ROHM Semiconductor
Quantity:
1 835
Company:
Part Number:
BR24L01AF-WE2
Manufacturer:
ROHM
Quantity:
21 523
Part Number:
BR24L01AF-WE2
Manufacturer:
ROHM/罗姆
Quantity:
20 000
● Cautions on microcontroller connection
○ Rs
○ Maximum value of Rs
○ Maximum value of Rs
The maximum value of Rs is determined by following relations.
The minimum value of Rs is determined by over current at bus collision. When over current flows, noises in power source line,
and instantaneous power failure of power source may occur. When allowable over current is defined as I, the following relation
must be satisfied. Determine the allowable current in consideration of impedance of power source line in set and so forth. Set
the over current to EEPROM 10mA or below.
In I
state to SDA port, insert a series resistance Rs between the pull up resistance Rpu and the SDA terminal of EEPROM. This is
controls over current that occurs when PMOS of the microcontroller and NMOS of EEPROM are turned ON simultaneously. Rs
also plays the role of protection of SDA terminal against surge. Therefore, even when SDA port is open drain input/output, Rs
can be used.
(1)SDA rise time to be determined by the capacity (CBUS) of bus line of Rpu and SDA shoulder be tR or below.
(2)The bus electric potential A to be determined by Rpu and Rs the moment when EEPROM outputs 'L' to SDA bus should
2
C BUS, it is recommended that SDA port is of open drain input/output. However, when to use CMOS input / output of tri
And AC timing should be satisfied even when SDA rise time is late.
sufficiently secure the input 'L' level (V
V
IL
Microcontroller
Microcontroller
Fig.50 I/O circuit diagram
'H' output
Microcontroller
Fig.52 I/O circuit diagram
V
R
CC
PU
Fig.53 I/O circuit diagram
Bus line
capacity CBUS
R
R
Over current Ⅰ
PU
S
R
I
OL
S
R
EEPROM
A
PU
R
S
IL
EEPROM
) of microcontroller including recommended noise margin 0.1Vcc.
EEPROM
'L' output
V
OL
29/32
Example)
from(2),
SCL
SDA
'H' output of microcontroller
When V
(V
∴
∴
CC
R
R
R
-V
Example)When V
V
R
R
PU
S
S
CC
S
S
CC
+R
OL
≦
≦
≦
=3V, V
≦
≧
)×R
S
Fig.51 Input/output collision timing
1.67[kΩ]
0.3×3-0.4-0.1×3
V
Over current flows to SDA line by 'H'
output of microcontroller and 'L' output
of EEPROM.
S
V
R
IL
CC
1.1×3-0.3×3
I
I
-V
S
1.1V
IL
+ V
=0.3V
OL
≧
≧ 300[Ω]
CC
-0.1V
CC
OL
-V
'L' output of EEPROM
10×10
ACK
CC,
=3V, I=10mA
+0.1V
IL
3
V
CC
-3
OL
CC
=0.4V, R
≦V
×
×
IL
R
20×10
PU
PU
=20kΩ,
3