IS61WV6416BLL-12TLI ISSI, Integrated Silicon Solution Inc, IS61WV6416BLL-12TLI Datasheet - Page 13

• Manufacturer Part Number: IS61WV6416BLL-12TLI
• Description: IC SRAM 1MBIT 12NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS61WV6416BLL-12TLI

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 12ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 12 ns
• Supply Voltage (max): 3.63 V
• Supply Voltage (min): 2.97 V
• Maximum Operating Current: 45 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V to 3.6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1040

IS61WV6416BLL
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
10/10/06
DATA RETENTION SWITCHING CHARACTERISTICS
Note:
1. Typical values are measured at V
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
DR
SDR
RDR
DR
1.65V
1.4V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
DD
CE
V
V
for Data Retention
DD
DR
DD
= 2.5V, T
A
= 25
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
O
C. Not 100% tested.
DD
= 1.8V, CE ≥ V
(CE Controlled)
DD
– 0.2V
1-800-379-4774
Data Retention Mode
CE ≥ V
Operations
DD
- 0.2V
COM
IND
AUTO
.
.
Min.
1.8
t
—
—
—
RC
0
Typ.
—
—
—
6
6
6
(1)
t
RDR
Max.
3.6
20
50
75
—
—
ISSI
Unit
V
µA
ns
ns
13
®