IS61WV5128BLL-10BLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10BLI Datasheet - Page 9

• Manufacturer Part Number: IS61WV5128BLL-10BLI
• Description: IC SRAM 4MBIT 10NS 36MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV5128BLL-10BLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-MBGA
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 19b
• Package Type: Mini BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 40mA
• Operating Supply Voltage (min): 2.4V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 36
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1063; IS61WV5128BLL-10BLI

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output load-
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. I
08/10/09
Symbol
ing specified in Figure 1.
t
t
t
t
t
t
t
t
t
t
t
rC
AA
ohA
ACe
doe
hzoe
lzoe
hzCe
lzCe
Pu
Pd
(2)
(2)
(2
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
Power Up Time
Power Down Time
Min.
2.0
—
—
—
—
—
8
0
0
3
0
-8
Max.
4.5
—
—
—
—
—
8
8
3
3
8
(1)
(Over Operating Range)
Min. Max.
2.0
10
—
—
—
—
—
0
0
3
0
-10
4.5
10
10
10
—
—
—
—
—
4
4
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9