AS7C1025B-15JINTR Alliance Memory, AS7C1025B-15JINTR Datasheet - Page 5

no-image

AS7C1025B-15JINTR

Manufacturer Part Number
AS7C1025B-15JINTR
Description
SRAM 1M, 5V, 15ns FAST 128K x 8 Asynch SRAM
Manufacturer
Alliance Memory
Datasheet

Specifications of AS7C1025B-15JINTR

Rohs
yes
Memory Size
1 Mbit
Organization
128 Kbit x 8
Access Time
15 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
4.5 V
Maximum Operating Current
90 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOJ-32
Memory Type
CMOS
Factory Pack Quantity
1000
3/26/04, v. 1.3
Write waveform 1 (WE controlled)
Write cycle (over the operating range)
Address
Write cycle time
Chip enable (CE) to write end
Address setup to write end
Address setup time
Write pulse width
Write recovery time
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
D
OUT
WE
D
IN
Parameter
t
AS
Symbol
t
t
t
t
t
t
t
t
t
t
t
DW
OW
WC
CW
AW
WP
WR
WZ
AH
DH
AS
Alliance Memory Inc.
10,11
t
WZ
Min Max Min Max Min Max Min Max
10
11
8
8
0
7
0
0
5
0
1
-
t
AW
-10
t
WC
t
5
-
-
-
-
-
-
-
-
-
-
WP
12
9
9
0
8
0
0
6
0
1
t
Data valid
®
-12
DW
6
15
10
10
t
0
9
0
0
8
0
1
OW
-15
t
t
t
7
WR
AH
DH
20
12
10
12
10
0
0
0
0
2
-20
8
Unit
P. 5 of 9
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AS7C1025B
Notes
4, 5
4, 5
4, 5

Related parts for AS7C1025B-15JINTR