IS42S81600E-7TL ISSI, Integrated Silicon Solution Inc, IS42S81600E-7TL Datasheet - Page 57

• Manufacturer Part Number: IS42S81600E-7TL
• Description: IC SDRAM 128MBIT 143MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S81600E-7TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 143 MHz
• Access Time: 6.5 ns, 5.4 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 130 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1067; IS42S81600E-7TL

IS42S81600E, IS42S16800E
WRITE - WITHOUT AUTO PRECHARGE
Notes:
1) Burst Length = 4
2) x16: A9 and A11 = "Don't Care"
3) t
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
03/16/2011
DQM/DQML
x8: A11 = "Don't Care"
COMMAND
A0-A9, A11
ras
BA0, BA1
DQMH
must not be violated.
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
AS
AS
AS
BANK
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
RCD
RAS
RC
t
CK
DISABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
DS
COLUMN m
WRITE
D
T2
BANK
IN
t
CMH
t
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
DS
D
T4
NOP
IN
t
m+
DH
2
t
DS
D
T5
IN
NOP
m+
t
DH
t
3
DPL (3)
SINGLE BANK
ALL BANKS
PRECHARGE
BANK
T6
t
RP
T7
NOP
DON'T CARE
ACTIVE
T8
ROW
BANK
ROW
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