IS43R16160B-5TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL Datasheet - Page 22
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IS43R16160B-5TL
Manufacturer Part Number
IS43R16160B-5TL
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS43R16160B-5TL
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Data Bus Width
16 bit
Maximum Clock Frequency
200 MHz
Access Time
0.7 ns
Supply Voltage (max)
2.7 V
Supply Voltage (min)
2.3 V
Maximum Operating Current
290 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
706-1085
IS43R16160B-5TL
IS43R16160B-5TL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS43R16160B-5TLI
Manufacturer:
TI
Quantity:
157
Part Number:
IS43R16160B-5TLI
Manufacturer:
ISSI
Quantity:
20 000
IS43R83200B, IS46R83200B
IS43R16160B, IS46R16160B
22
CAPACITANCE
(Ta= 25
Symbol
CI(A)
CI(C)
CI(K)
CI/O
AC TIMING REQUIREMENTS(Continues)
Output Load Condition
Symbol
tXSRD Exit Self Ref. to -Read command
tXPNR Exit Power down to command
tXPRD Exit Power down to -Read command
tXSNR Exit Self Ref. to non-Read command
tREFI
tRCD
tRRD
tDAL
tWTR
tRAS
tRFC
tWR
o
tRC
tRP
C, Vdd = VddQ = 2.5V + 0.2V Vss = VssQ = 0V, unless otherwise noted)
V
OUT
Row Active time
Row Cycle time(operation)
Auto Ref. to Active/Auto Ref. command period
Row to Column Delay
Row Precharge time
Act to Act Delay time
Write Recovery time
Auto Precharge write recovery + precharge time
Internal Write to Read Command Delay
Average Periodic Refresh interval
I/O Capacitance, I/O, DQS, DM pin
Input Capacitance, address pin
Input Capacitance, control pin
Input Capacitance, CLK pin
AC Characteristics Parameter
Zo=50Ω
Parameter
V
TT
=V
30pF
50Ω
REF
V
REF
Min.
VI=1.25v
f=100MHz
VI=25mVrms
200
40
55
70
15
15
10
15
−
75
Test Conditio
2
1
1
-5
120,000
Max
7.8
DQS
n
Min.
200
42
60
72
18
18
12
15
75
−
1
1
1
Min. Max.
1.3
1.3
1.3
2
Limits
-6
120,000
Max
7.8
2.5
2.5
2.5
4
Integrated Silicon Solution, Inc.
DQ
Cap.(Max.)
Min.
200
Output Timing
Measurement
Reference Point
45
−
65
75
20
20
15
15
75
1
1
1
Delta
0.75
0.25
1.3
-75
120,000
Max
7.8
U
pF
pF
pF
pF
nit
Unit
tCK
tCK
tCK
tCK
tCK
µs
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Notes
08/13/2010
21
17
18
V
V
Rev. E
REF
REF