IS42S32200E-7BLI ISSI, Integrated Silicon Solution Inc, IS42S32200E-7BLI Datasheet - Page 34

IC SDRAM 64MBIT 143MHZ 90BGA

IS42S32200E-7BLI

Manufacturer Part Number
IS42S32200E-7BLI
Description
IC SDRAM 64MBIT 143MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S32200E-7BLI

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-BGA
Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
8/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
140mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1080
IS42S32200E-7BLI

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Price
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Part Number:
IS42S32200E-7BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
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IS42S32200E, IS45S32200E
DC ELECTRICAL CHARACTERISTICS 1
I
1. I
2. Input signals are changed one time during 30ns.
3. Test condition for -75E is CL = 2.
DC ELECTRICAL CHARACTERISTICS 2
34
Symbol Parameter
i
i
i
i
I
i
I
I
dd3ps
i
i
i
Notes:
Symbol Parameter
i
i
V
V
dd1
dd2p
dd2ps
dd2N
dd2Ns
dd3N
dd3Ns
dd3p
dd4
dd5
dd6
il
ol
oh
ol
dd
(1)
(2)
(2)
(
max
) is specified at the output open condition.
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(Power-Down Mode)
Active Standby Current
(Power-Down Mode)
Operating Current
Auto-Refresh Current
Self-Refresh Current
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Test Condition
One bank active, CL = 3, BL = 1,
t
CKE ≤ V
CKE ≤ V
CS ≥ V
CS ≥ V
CKE ≤ V
CS ≥ V
CS ≥ V
CKE ≤ V
CKE ≤ V
CKE ≤ V
All banks active, BL = 4, CL = 3,
t
t
CKE ≤ 0.2V
Test Condition
0V ≤ Vin ≤ V
the tested pin at 0V
Output is disabled, 0V ≤ Vout ≤ V
I
I
clk
t
t
ck
rc
oh
ol
ck
ck
= t
= t
= 15ns
= 15ns
= 2mA
= -2mA
= t
ck
rc
clk
dd
dd
dd
dd
il
il
il
il
il
il
(min)
(min), t
- 0.2V, CKE ≥ V
- 0.2V, CKE ≥ V
- 0.2V, CKE ≥ V
- 0.2V, CKE ≥ V
(min), t
(
(
(
(
(
(
max
max
max
max
max
max
dd
(Recommended Operation Conditions unless otherwise noted.)
, with pins other than
), t
), CLK ≤ V
), All inputs stable
), All inputs stable
), t
), CLK ≤ V
(Recommended Operation Conditions unless otherwise noted.)
clk
rc
ck
ck
= t
= t
= 15ns
= 15ns
clk
rc
il
il
(min)
(min)
ih
ih
ih
ih
(
(
max
max
(
(
(
(
miN
miN
miN
miN
Integrated Silicon Solution, Inc. — www.issi.com
)
)
)
) or
)
) or
dd
,
180
200
150
45
30
55
30
-5
2
2
8
8
2
150
160
130
45
30
55
30
-6
2
2
8
8
2
130
140
120
Min
2.4
45
30
55
30
-7
-5
-5
2
2
8
8
2
-75E
Max
130
160
130
0.4
45
30
55
30
2
2
8
8
2
5
5
07/12/2010
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Unit
µA
µA
Rev. D
V
V

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