IS42S32800B-7TL ISSI, Integrated Silicon Solution Inc, IS42S32800B-7TL Datasheet - Page 54

• Manufacturer Part Number: IS42S32800B-7TL
• Description: IC SDRAM 256MBIT 143MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32800B-7TL

• Package / Case: 86-TSOPII
• Memory Size: 256M (8Mx32)
• Format - Memory: RAM
• Memory Type: SDRAM
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Data Bus Width: 32 bit
• Organization: 2 Mbit x 32
• Maximum Clock Frequency: 143 MHz
• Access Time: 7 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 150 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1025

IS42S32800B
54
Figure 19.3.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency=3)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK3
Command
Bank A
Write
CAx
DAx
DAx+1 DAx+2 DAx+3 DAx-1 DAx
Command
Activate
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RBx
RBx
DAx+1 DBx
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Command
Bank B
CBx
Write
DBx+1
DBx+3 DBx+4 DBx+5
Burst Stop
Command
Integrated Silicon Solution, Inc.
Precharge
Command
Bank B
Data is ignor ed
Command
Activate
Bank B
RBy
RBy
07/21/09
Rev. F