M25P32-VME6G NUMONYX, M25P32-VME6G Datasheet - Page 13

• Manufacturer Part Number: M25P32-VME6G
• Description: IC FLASH 32MBIT 75MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P32-VME6G

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: VDFPN
• No. Of Pins: 8
• Base Number: 25
• Frequency: 75MHz
• Ic Generic: RoHS Compliant
• Memory Configuration: 4M X 8
• Interface Type: Serial, SPI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M25P32
4
4.1
4.2
4.3
4.4
4.5
Operating features
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one
byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration t
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes (see
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of
duration t
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
Polling during a Write, Program or Erase cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase
(SE or BE) can be achieved by not waiting for the worst case delay (t
Write In Progress (WIP) bit is provided in the Status Register so that the application program
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
Fast Program/Erase mode
The Fast Program/Erase mode is used to speed up programming/erasing. The device
enters the Fast Program/Erase mode during the Page Program, Sector Erase or Bulk Erase
instruction whenever a voltage equal to V
The use of the Fast Program/Erase mode requires specific operating conditions in addition
to the normal ones (V
●
●
●
Active Power, Standby Power and Deep Power-down modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
the voltage applied to the W/V
ambient temperature, T
the cumulated time during which W/V
SE
or t
BE
).
CC
must be within the normal operating range):
A
must be 25 °C ±10 °C,
PP
pin must be equal to V
PPH
PP
is at V
is applied to the W/V
PP
PPH
).
should be less than 80 hours
PPH
(see
PP
W
Page Program
pin.
, t
Table
Operating features
PP
, t
SE
10)
, or t
BE
(PP)).
). The
13/53