CY62167EV30LL-45BVXI Cypress Semiconductor Corp, CY62167EV30LL-45BVXI Datasheet - Page 10

• Manufacturer Part Number: CY62167EV30LL-45BVXI
• Description: IC SRAM 16MBIT 45NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62167EV30LL-45BVXI

• Memory Size: 16M (2M x 8 or 1M x 16)
• Package / Case: 48-VFBGA
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 30 mA
• Organization: 1 M x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V or 3.3 V
• Memory Configuration: 2M X 8 / 1M X 16
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 48
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Waveforms
Document #: 38-05446 Rev. *I
Notes
30. If CE
31. During this period the I/Os are in output state. Do not apply input signals.
ADDRESS
ADDRESS
BHE/BLE
BHE/BLE
DATA I/O
DATA I/O
1
goes HIGH and CE
CE
CE
CE
CE
WE
WE
1
2
1
2
NOTE 31
2
NOTE 31
goes LOW simultaneously with WE = V
(continued)
Figure 10. Write Cycle No. 4 (BHE/BLE controlled, OE LOW)
t
SA
t
SA
Figure 9. Write Cycle No. 3 (WE controlled, OE LOW)
t
HZWE
t
AW
t
IH
AW
, the output remains in a high impedance state.
t
t
SCE
t
BW
SCE
t
PWE
t
t
WC
WC
t
PWE
t
BW
VALID DATA
VALID DATA
t
t
SD
SD
[30]
CY62167EV30 MoBL
[30]
t
HA
t
t
HA
LZWE
t
t
HD
HD
Page 10 of 16
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