VS-HFA25TB60PBF Vishay Semiconductors, VS-HFA25TB60PBF Datasheet

VS-HFA25TB60PBF

Manufacturer Part Number

VS-HFA25TB60PBF

Description

Rectifiers 600 Volt 25 Amp

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-HFA25TB60PBF.pdf (7 pages)

Specifications of VS-HFA25TB60PBF

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

2 V at 50 A

Recovery Time

75 ns

Forward Continuous Current

25 A

Max Surge Current

225 A

Reverse Current Ir

20 uA

Mounting Style

Through Hole

Package / Case

TO-220AC

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Factory Pack Quantity

Current page: 1 of 7
Download datasheet (201Kb)

Revision: 02-Dec-11

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

Diode variation

Package

F(AV)

max.

typ.

at I

www.vishay.com

Cathode

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

TO-220AC

cathode

Base

Ultrafast Soft Recovery Diode, 25 A

Anode

TO-220AC

Single die

150 °C

600 V

23 ns

1.7 V

25 A

SYMBOL

HEXFRED

VS-HFA25TB60PbF, VS-HFA25TB60-N3

FSM

FRM

, T

Stg

TEST CONDITIONS

= 100 °C

= 25 °C

= 100 °C

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I

• Compliant to RoHS Directive 2002/95/EC

• Designed

• Halogen-free according to IEC 61249-2-21

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA25TB60... is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 600 V and 25 A continuous current, the

VS-HFA25TB60... is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

extremely low values of peak recovery current (I

does not exhibit any tendency to “snap-off” during the

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA25TB60... is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

JEDEC-JESD47

definition (-N3 only)

portion of recovery. The HEXFRED features combine to

www.vishay.com/doc?91000

RRM

and

and Q

qualified

- 55 to + 150

Vishay Semiconductors

VALUES

600

225

100

125

DiodesEurope@vishay.com

according

Document Number: 94065

product line features

UNITS

°C

RRM

) and

Related parts for VS-HFA25TB60PBF

VS-HFA25TB60PBF Summary of contents

Page 1

... Operating junction and storage temperature range Revision: 02-Dec-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA25TB60PbF, VS-HFA25TB60-N3 ® HEXFRED FEATURES • Ultrafast and ultrasoft recovery • ...

Page 2

... Marking device Revision: 02-Dec-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA25TB60PbF, VS-HFA25TB60- °C unless otherwise specified) J TEST CONDITIONS I = 100 μA ...

Page 3

... Fig Maximum Thermal Impedance Z Revision: 02-Dec-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA25TB60PbF, VS-HFA25TB60-N3 10 000 1000 T = 150 °C 100 ...

Page 4

... F Fig Typical Recovery Current vs. dI Revision: 02-Dec-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA25TB60PbF, VS-HFA25TB60-N3 1400 V = 200 125 °C ...

Page 5

... Dimensions Part marking information SPICE model Revision: 02-Dec-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA25TB60PbF, VS-HFA25TB60- ...

Page 6

... H1 0.068 L 0.068 4 L1 0.024 L3 0.022 4 L4 0.600 3 Ø P 0.355 Q  0.507 6 0.414 3, 6 Outline Dimensions Vishay Semiconductors Thermal pad D2 ( Detail B Lead tip E1 (6) Lead assignments Diodes Cathode 3 - Anode Conforms to JEDEC outline TO-220AC MILLIMETERS INCHES MIN. MAX. ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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