CY7C1515AV18-200BZXI Cypress Semiconductor Corp, CY7C1515AV18-200BZXI Datasheet - Page 10
![no-image](/images/manufacturer_photos/0/1/179/cypress_semiconductor_corp_sml.jpg)
CY7C1515AV18-200BZXI
Manufacturer Part Number
CY7C1515AV18-200BZXI
Description
IC SRAM 72MBIT 200MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1513AV18-167BZC.pdf
(31 pages)
Specifications of CY7C1515AV18-200BZXI
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (2M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1515AV18-200BZXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Application Example
Figure 1
Truth Table
The truth table for CY7C1511AV18, CY7C1526AV18, CY7C1513AV18, and CY7C1515AV18 follows.
Notes
Document Number: 001-06985 Rev. *D
Write Cycle:
Load address on the rising
edge of K; input write data
on two consecutive K and
K rising edges.
Read Cycle:
Load address on the rising
edge of K; wait one and a
half cycle; read data on
two consecutive C and C
rising edges.
NOP: No Operation
Standby: Clock Stopped
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW,
3. Device powers up deselected with the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.
5. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
9. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the
MASTER
symmetrically.
second read or write request.
ASIC)
(CPU
BUS
or
Operation
shows four QDR-II used in an application.
CLKIN/CLKIN#
Delayed K#
DATA OUT
Delayed K
Source K#
Source K
Address
DATA IN
BWS#
WPS#
RPS#
Vt
R
R
Stopped
L-H
L-H
L-H
K
R = 50ohms
D
A
RPS WPS
H
L
H
X
[9]
[8]
↑
L
represents rising edge.
R
P
S
#
Vt = Vddq/2
X
H
X
[9]
W
P
S
#
SRAM #1
Figure 1. Application Example
W
B
S
#
D(A) at K(t + 1)↑ D(A + 1) at K(t + 1)↑ D(A + 2) at K(t + 2)↑ D(A + 3) at K(t + 2)↑
Q(A) at C(t + 1)↑ Q(A + 1) at C(t + 2)↑ Q(A + 2) at C(t + 2)↑ Q(A + 3) at C(t + 3)↑
D = X
Q = High-Z
Previous State
C C#
DQ
CQ/CQ#
K
ZQ
K#
Q
R = 250ohms
D = X
Q = High-Z
Previous State
DQ
CY7C1513AV18, CY7C1515AV18
CY7C1511AV18, CY7C1526AV18
D
A
R
D = X
Q = High-Z
Previous State
Vt
Vt
R
P
S
#
W
P
S
#
DQ
W
B
S
#
SRAM #4
[2, 3, 4, 5, 6, 7]
C C#
CQ/CQ#
D = X
Q = High-Z
Previous State
K
ZQ
K#
Q
Page 10 of 31
R = 250ohms
DQ
[+] Feedback
[+] Feedback