CY7C1523AV18-250BZC Cypress Semiconductor Corp, CY7C1523AV18-250BZC Datasheet

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... K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1522AV18, two 9-bit words in the case of CY7C1529AV18, two 18-bit words in the case of CY7C1523AV18, and two 36-bit words in the case of CY7C1524AV18 that burst sequentially into or out of the device. ...

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... Address A (21:0) Register K CLK K Gen. DOFF R/W V REF Control Logic LD BWS [0] Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Write Write Data Reg Data Reg Control Logic Read Data Reg Reg. Reg. 8 Reg. Write Write Data Reg Data Reg Control Logic Read Data Reg. ...

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... Logic Block Diagram (CY7C1523AV18 [17:0] 21 Address A (20:0) Register K CLK K Gen. DOFF R/W V REF Control Logic LD BWS [1:0] Logic Block Diagram (CY7C1524AV18 [35:0] 20 Address A (19:0) Register K CLK K Gen. DOFF R/W V REF Control Logic LD BWS [3:0] Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 ...

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... Pin Configuration The pin configuration for CY7C1522AV18, CY7C1529AV18, CY7C1523AV18, and CY7C1524AV18 follow DOFF V V REF DDQ TDO TCK DOFF V V REF DDQ TDO TCK A Note 1. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level. Document #: 001-06981 Rev. *D ...

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... Pin Configuration (continued) The pin configuration for CY7C1522AV18, CY7C1529AV18, CY7C1523AV18, and CY7C1524AV18 follow NC/144M D10 D NC D11 Q10 Q11 F NC Q12 D12 G NC D13 Q13 H DOFF V V REF DDQ D14 Q14 L NC Q15 D15 D16 N NC D17 Q16 Q17 R TDO TCK ...

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... Internally, the device is organized as Synchronous arrays each for CY7C1522AV18 arrays each for CY7C1529AV18 arrays each 18) for CY7C1523AV18 and arrays each 36) for CY7C1524AV18. Therefore, only 22 address inputs are needed to access the entire memory array of CY7C1522AV18 and CY7C1529AV18, 21 address inputs for CY7C1523AV18 and 20 address inputs for CY7C1524AV18 ...

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... Ground Ground for the Device Power Supply Power Supply Inputs for the Outputs of the Device. DDQ Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Pin Description Switching Characteristics on page 23. Switching Characteristics on page 23. output impedance are set to 0.2 x RQ, where resistor connected [x:0] ...

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... This feature can be used to simplify read/modify/write operations to a byte write operation. Single Clock Mode The CY7C1523AV18 can be used with a single clock that controls both the input and output registers. In this mode the ) inputs pass through device recognizes only a single pair of input clocks (K and K) that control both the input and output registers ...

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... 50Ohms Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 DLL is locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However not necessary to reset the DLL to lock it to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented ...

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... Truth Table The truth table for CY7C1522AV18, CY7C1529AV18, CY7C1523AV18, and CY7C1524AV18 follows. Operation Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges. Read Cycle: Load address; wait one and a half cycle; read data on consecutive C and C rising edges. ...

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... L– – Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 [2, 8] Comments [ Comments – During the Data portion of a write sequence, all four bytes (D the device. L–H During the Data portion of a write sequence, all four bytes (D the device. – During the Data portion of a write sequence, only the lower byte (D into the device ...

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... TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in page 15 ...

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... Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins ...

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... The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 TEST-LOGIC/ 0 IDLE Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 [9] 1 SELECT DR-SCAN 0 1 CAPTURE- SHIFT- EXIT1-DR ...

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... These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the 11. Overshoot: V (AC) < 0.85V (Pulse width less than t IH DDQ 12. All Voltage referenced to Ground. Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 0 Bypass Register Instruction Register ...

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... CS CH 14. Test conditions are specified using the load in TAP AC Test Conditions. t Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Description [14] Figure 2. TAP Timing and Test Conditions 0.9V 1.8V 50Ω ...

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... RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Value CY7C1529AV18 CY7C1523AV18 000 000 00000110100 00000110100 1 ...

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... Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Bump ID Bit # Bump ID 10G 11F 58 5A 11G 10F 61 4B 11E 62 3A 10E 63 2A 10D 10C 66 3B 11D 11B ...

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... DDQ DOFF Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 DLL Constraints ■ DLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as t ■ The DLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the DLL is enabled, then the DLL may lock onto an incorrect frequency, causing unstable SRAM behavior ...

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... V REF DDQ 19. The operation current is calculated with 50% read cycle and 50% write cycle. Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Latch-up Current ................................................... > 200 mA Operating Range Range Commercial ...

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... DD I Automatic Power down SB1 Current AC Electrical Characteristics [11] Over the Operating Range Parameter Description V Input HIGH Voltage IH V Input LOW Voltage IL Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Test Conditions V = Max, 200MHz (x8 mA, OUT (x9 1/t MAX CYC (x18) (x36) 167MHz (x8) ...

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... Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V 250Ω, V pulse levels of 0.25V to 1.25V, and output loading of the specified I Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Test Conditions T = 25° MHz 1.8V, V ...

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... This part has a voltage regulator internally; t POWER initiated. 23. For D2 data signal on CY7C1529AV18 device, t Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 300 MHz 278 MHz Min Max Min Max Min Max Min Max Min Max [22 ...

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... CHZ CLZ 26. At any voltage and temperature t is less than t CHZ Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 300 MHz 278 MHz Min Max Min Max Min Max Min Max Min Max – 0.45 – 0.45 – ...

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... Outputs are disabled (High-Z) one clock cycle after a NOP. 29. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 READ WRITE WRITE ...

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... CY7C1522AV18-278BZXI CY7C1529AV18-278BZXI CY7C1523AV18-278BZXI CY7C1524AV18-278BZXI Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Package Diagram Package Type 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( ...

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... Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) Ordering Code 250 CY7C1522AV18-250BZC CY7C1529AV18-250BZC CY7C1523AV18-250BZC CY7C1524AV18-250BZC CY7C1522AV18-250BZXC CY7C1529AV18-250BZXC CY7C1523AV18-250BZXC CY7C1524AV18-250BZXC CY7C1522AV18-250BZI CY7C1529AV18-250BZI CY7C1523AV18-250BZI CY7C1524AV18-250BZI CY7C1522AV18-250BZXI ...

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... CY7C1522AV18-167BZXI CY7C1529AV18-167BZXI CY7C1523AV18-167BZXI CY7C1524AV18-167BZXI Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 Package Diagram Package Type 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( ...

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... Package Diagram Figure 6. 165-Ball FBGA ( 1.4 mm), 51-85195 Document #: 001-06981 Rev. *D CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 51-85195-*A Page [+] Feedback [+] Feedback ...

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... Document History Page Document Title: CY7C1522AV18/CY7C1529AV18/CY7C1523AV18/CY7C1524AV18, 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Document Number: 001-06981 ECN NO. SUBMISSION ORIG. OF REV. CHANGE DESCRIPTION OF CHANGE DATE ** 433241 See ECN *A 462002 See ECN *B 503690 See ECN *C 1523363 See ECN VKN/AESA Converted from preliminary to final ...