CYD09S18V18-200BBXC Cypress Semiconductor Corp, CYD09S18V18-200BBXC Datasheet - Page 48

• Manufacturer Part Number: CYD09S18V18-200BBXC
• Description: IC SRAM 9MBIT 200MHZ 256LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYD09S18V18-200BBXC

• Memory Size: 9M (512K x 18)
• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 256-LFBGA
• Memory Configuration: 512K X 18
• Clock Frequency: 77MHz
• Access Time: 3.3ns
• Supply Voltage Range: 1.42V To 1.58V, 1.7V To 1.9V
• Memory Case Style: BGA
• No. Of Pins: 256
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2034; CYD09S18V18-200BBXC

Package Diagrams
Acronyms
Document Number: 38-06082 Rev. *J
BGA
CMOS
DLL
FPBGA
HSTL
I/O
SDR
SRAM
TCK
TDI
TDO
TMS
VIM
Acronym
ball grid array
complementary metal oxide semiconductor
delay lock loop
fine pitch ball gird array
high speed transceiver logic
input/output
single data rate
static random access memory
test clock
test data in
test data out
test mode select
variable impedance matching
Figure 36. 484-ball PBGA (27 mm × 27 mm × 2.33 mm), 001-07825
Description
Document Conventions
Units of Measure
ns
V
µA
mA
ms
mV
MHz
pF
W
°C
Symbol
nano seconds
Volts
micro Amperes
milli Amperes
milli seconds
milli Volts
Mega Hertz
pico Farad
Watts
degree Celcius
Unit of Measure
001-07825 *A
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