CY7C1470V25-167AXC Cypress Semiconductor Corp, CY7C1470V25-167AXC Datasheet - Page 15
![IC SRAM 72MBIT 167MHZ 100LQFP](/photos/6/76/67624/428-100-tqfp_14x20x1_4_sml.jpg)
CY7C1470V25-167AXC
Manufacturer Part Number
CY7C1470V25-167AXC
Description
IC SRAM 72MBIT 167MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Specifications of CY7C1470V25-167AXC
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Density
72Mb
Access Time (max)
3.4ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
167MHz
Operating Supply Voltage (typ)
2.5V
Address Bus
21b
Package Type
TQFP
Operating Temp Range
0C to 70C
Number Of Ports
4
Supply Current
400mA
Operating Supply Voltage (min)
2.375V
Operating Supply Voltage (max)
2.625V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
2M
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1470V25-167AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
135
Company:
Part Number:
CY7C1470V25-167AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1470V25-167AXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY7C1470V25-167AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
2.5 V TAP AC Test Conditions
Input pulse levels................................................V
Input rise and fall time .....................................................1 ns
Input timing reference levels........................................ 1.25 V
Output reference levels ............................................... 1.25 V
Test load termination supply voltage ........................... 1.25 V
2.5 V TAP AC Output Load Equivalent
TAP DC Electrical Characteristics and Operating Conditions
(0 °C < T
Identification Register Definitions
Document Number: 38-05290 Rev. *L
V
V
V
V
V
V
I
Revision number (31:29)
Device depth (28:24)
Architecture/memory type(23:18)
Bus width/density(17:12)
Cypress JEDEC ID code (11:1)
ID register presence indicator (0)
Note
X
11. All voltages referenced to V
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDO
A
Instruction Field
< +70 °C; V
Z = 50
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input load current
O
DD
SS
Description
= 2.5 V ± 0.125 V unless otherwise noted)
(GND).
1.25V
CY7C1470V25
00000110100
(2 M × 36)
001000
100100
01011
20pF
000
50
I
I
I
I
GND V
1
OH
OH
OL
OL
= 1.0 mA
= 100 A
= –1.0 mA
= –100 A
SS
to 2.5 V
I
V
CY7C1472V25
00000110100
DDQ
Test Conditions
(4 M × 18)
001000
010100
01011
000
1
1.8 V TAP AC Test Conditions
Input pulse levels.................................... 0.2 V to V
Input rise and fall time .....................................................1 ns
Input timing reference levels.......................................... 0.9 V
Output reference levels ................................................. 0.9 V
Test load termination supply voltage ............................. 0.9 V
1.8 V TAP AC Output Load Equivalent
[11]
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
= 2.5 V
= 2.5 V
= 1.8 V
= 2.5 V
= 2.5 V
= 1.8 V
= 2.5 V
= 1.8 V
= 2.5 V
= 1.8 V
CY7C1474V25
TDO
00000110100
(1 M × 72)
001000
110100
01011
000
1
Z = 50
O
Describes the version number
Reserved for internal use
Defines memory type and
architecture
Defines width and density
Allows unique identification of
SRAM vendor
Indicates the presence of an ID
register
1.26
–0.3
–0.3
Min
1.7
2.1
1.6
1.7
–5
–
–
–
Description
V
V
DD
DD
Max
0.36
0.4
0.2
0.2
0.7
CY7C1470V25
CY7C1472V25
CY7C1474V25
0.9V
–
–
–
5
+ 0.3
+ 0.3
20pF
50
Page 15 of 31
DDQ
Unit
A
V
V
V
V
V
V
V
V
V
V
– 0.2
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