CY7C1512AV18-200BZXI Cypress Semiconductor Corp, CY7C1512AV18-200BZXI Datasheet - Page 16
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CY7C1512AV18-200BZXI
Manufacturer Part Number
CY7C1512AV18-200BZXI
Description
IC SRAM 72MBIT 200MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1514AV18-167BZXC.pdf
(28 pages)
Specifications of CY7C1512AV18-200BZXI
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1512AV18-200BZXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
TAP AC Switching Characteristics
Over the Operating Range
TAP Timing and Test Conditions
Figure 2
Notes
Document #: 001-06984 Rev. *C
t
t
t
t
Setup Times
t
t
t
Hold Times
t
t
t
Output Times
t
t
13. t
14. Test conditions are specified using the load in TAP AC Test Conditions. t
TCYC
TF
TH
TL
TMSS
TDIS
CS
TMSH
TDIH
CH
TDOV
TDOX
Parameter
CS
and t
shows the TAP timing and test conditions.
CH
refer to the setup and hold time requirements of latching data from the boundary scan register.
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data In
TDI
Test Data Out
TDO
[13, 14]
Z
0
= 50Ω
(a)
GND
0.9V
Figure 2. TAP Timing and Test Conditions
C
50Ω
L
= 20 pF
Description
[14]
t
TMSS
t
TDIS
R
/t
F
= 1 ns.
t
t
TDOV
TH
0V
t
t
TL
TMSH
t
TDIH
CY7C1510AV18, CY7C1525AV18
CY7C1512AV18, CY7C1514AV18
1.8V
t
ALL INPUT PULSES
TDOX
0.9V
t
TCYC
Min
50
20
20
5
5
5
5
5
5
0
Max
20
10
Page 16 of 28
MHz
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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