CY7C1512AV18-200BZXI Cypress Semiconductor Corp, CY7C1512AV18-200BZXI Datasheet - Page 22
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CY7C1512AV18-200BZXI
Manufacturer Part Number
CY7C1512AV18-200BZXI
Description
IC SRAM 72MBIT 200MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1514AV18-167BZXC.pdf
(28 pages)
Specifications of CY7C1512AV18-200BZXI
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1512AV18-200BZXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
AC Test Loads and Waveforms
Note
Document #: 001-06984 Rev. *C
19. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, V
pulse levels of 0.25V to 1.25V, and output loading of the specified I
OUTPUT
DEVICE
UNDER
TEST
V
(a)
REF
ZQ
Z
RQ =
250Ω
0.75V
0
= 50Ω
V
REF
R
L
= 0.75V
= 50Ω
INCLUDING
DEVICE
UNDER
TEST
OUTPUT
JIG AND
SCOPE
V
REF
OL
ZQ
/I
OH
and load capacitance shown in (a) of
0.75V
RQ =
250Ω
V
(b)
REF
= 0.75V
R = 50Ω
5 pF
CY7C1510AV18, CY7C1525AV18
CY7C1512AV18, CY7C1514AV18
0.25V
AC Test Loads and
1.25V
SLEW RATE= 2 V/ns
ALL INPUT PULSES
0.75V
Waveforms.
DDQ
Page 22 of 28
[19]
= 1.5V, input
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