VS-MBRS190TRPBF Vishay Semiconductors, VS-MBRS190TRPBF Datasheet - Page 3

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VS-MBRS190TRPBF

Manufacturer Part Number
VS-MBRS190TRPBF
Description
Schottky Diodes & Rectifiers 1.0 Amp 90 Volt
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-MBRS190TRPBF

Product Category
Schottky Diodes & Rectifiers
Rohs
yes
Product
Schottky Rectifiers
Peak Reverse Voltage
90 V
Forward Continuous Current
1 A
Max Surge Current
870 A
Configuration
Single
Forward Voltage Drop
0.78 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
SMD/SMT
Package / Case
SMB (DO-214AA)
Factory Pack Quantity
3000
Document Number: 94315
Revision: 05-Jul-10
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.2
100
T
T
T
0.1
10
0.00001
V
J
J
J
1
= 175 °C
= 125 °C
= 25 °C
FM
0.4
- Forward Voltage Drop (V)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
0.0001
0.6
(thermal resistance)
Fig. 4 - Maximum Thermal Impedance Z
Single pulse
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
0.8
0.001
0
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
t
Schottky Rectifier, 1.0 A
1
1.0
- Rectangular Pulse Duration (s)
20
T
J
V
= 25 °C
R
0.01
- Reverse Voltage (V)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
40
60
0.1
thJC
Characteristics (Per Leg)
80
DiodesEurope@vishay.com
0
Fig. 2 - Typical Peak Reverse Current vs.
T
T
T
Notes:
1. Duty factor D = t
2. Peak T
J
J
J
= 175 °C
= 125 °C
= 75 °C
100
1
20
V
R
J
= P
- Reverse Voltage (V)
Reverse Voltage
Vishay Semiconductors
DM
P
DM
40
x Z
1
T
/t
10
t
J
1
thJC
2
= 25 °C
T
t
T
2
J
J
+ T
= 150 °C
= 100 °C
T
60
J
C
= 50 °C
100
80
.
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100
3

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