SST49LF016C-33-4C-NHE Microchip Technology, SST49LF016C-33-4C-NHE Datasheet - Page 2
![IC FLASH SER LPC 16MBIT 32PLCC](/photos/16/11/161142/sst49lf016c_sml.jpg)
SST49LF016C-33-4C-NHE
Manufacturer Part Number
SST49LF016C-33-4C-NHE
Description
IC FLASH SER LPC 16MBIT 32PLCC
Manufacturer
Microchip Technology
Datasheets
1.SST49LF080A-33-4C-NHE.pdf
(2 pages)
2.SST49LF080A-33-4C-NHE.pdf
(2 pages)
3.SST49LF016C-33-4C-NHE.pdf
(36 pages)
Specifications of SST49LF016C-33-4C-NHE
Memory Type
FLASH
Memory Size
16M (2M x 8)
Operating Temperature
0°C ~ 85°C
Package / Case
32-PLCC
Format - Memory
FLASH
Speed
33MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Data Bus Width
8 bit
Architecture
Sectored
Interface Type
Parallel, Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
18 mA
Mounting Style
SMD/SMT
Organization
4 KB x 512
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST49LF016C-33-4C-NHE
Manufacturer:
ST
Quantity:
271
Company:
Part Number:
SST49LF016C-33-4C-NHE
Manufacturer:
Microchip Technology
Quantity:
10 000
Part Number:
SST49LF016C-33-4C-NHE
Manufacturer:
SST
Quantity:
20 000
Company:
Part Number:
SST49LF016C-33-4C-NHE-T
Manufacturer:
Microchip Technology
Quantity:
10 000
16 Mbit LPC Serial Flash
SST49LF016C
Data Sheet
The SST49LF016C significantly improves performance
and reliability, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent and time of application. Because the SST49LF016C
writes in-system with a single 3.0-3.6V power supply, the
total energy consumed during any Erase or Program oper-
ation is less than alternative flash memory technologies.
The SuperFlash technology provides fixed Erase and Pro-
gram time, independent of the number of Erase/Program
cycles performed. This feature eliminates system software
or hardware calibration or erase cycle correlation which is
necessary with alternative flash memory technologies,
whose Erase and Program time increase with accumulated
Erase/Program cycles.
The SST49LF016C product provides a maximum program
time of 10 µs per byte with a single-byte Program opera-
tion; effectively 5 µs per byte with a dual-byte Program
operation and 2.5 µs per byte with a quad-byte Program
operation.
The SST49LF016C is offered in 32-PLCC, 32-TSOP , and
40-TSOP packages. See Figures 3, 4, and 5 for pin assign-
ments and Table 1 for pin descriptions.
©2008 Silicon Storage Technology, Inc.
S71237-08-000
5/08
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