SST49LF016C-33-4C-NHE Microchip Technology, SST49LF016C-33-4C-NHE Datasheet - Page 25
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SST49LF016C-33-4C-NHE
Manufacturer Part Number
SST49LF016C-33-4C-NHE
Description
IC FLASH SER LPC 16MBIT 32PLCC
Manufacturer
Microchip Technology
Datasheets
1.SST49LF080A-33-4C-NHE.pdf
(2 pages)
2.SST49LF080A-33-4C-NHE.pdf
(2 pages)
3.SST49LF016C-33-4C-NHE.pdf
(36 pages)
Specifications of SST49LF016C-33-4C-NHE
Memory Type
FLASH
Memory Size
16M (2M x 8)
Operating Temperature
0°C ~ 85°C
Package / Case
32-PLCC
Format - Memory
FLASH
Speed
33MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Data Bus Width
8 bit
Architecture
Sectored
Interface Type
Parallel, Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
18 mA
Mounting Style
SMD/SMT
Organization
4 KB x 512
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
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ST
Quantity:
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Company:
Part Number:
SST49LF016C-33-4C-NHE
Manufacturer:
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Quantity:
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Part Number:
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Quantity:
20 000
Company:
Part Number:
SST49LF016C-33-4C-NHE-T
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Microchip Technology
Quantity:
10 000
16 Mbit LPC Serial Flash
SST49LF016C
DC Characteristics
TABLE 20: DC Operating Characteristics at 33 MHz and 66 MHz (All Interfaces)
TABLE 21: Recommended System Power-up Timings
TABLE 22: Pin Capacitance
©2008 Silicon Storage Technology, Inc.
I
I
I
I
I
I
I
V
V
V
V
V
V
V
Symbol
T
T
Parameter
C
C
L
Symbol Parameter
DD
SB
RY
I
LI
LO
H
PU-READ
PU-WRITE
PIN
H
IHI
ILI
IL
OL
OH
IH
I/O
IN
1. I
2. The device is in Ready mode when no activity is on the LPC bus.
3. Do not violate processor or chipset specification regarding INIT# voltage.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. Refer to PCI spec.
2
1
1
3
3
1
2
DD
active while a Read or Write (Program or Erase) operation is in progress.
1
1
Active V
Read
Single-/Dual-Byte Program, Erase
Quad-Byte Program
Standby V
(LPC Interface)
Ready Mode V
Input Leakage Current for ID[3:0] pins
Input Leakage Current
Output Leakage Current
Supervoltage Current for WP#/AAI
Supervoltage for WP#/AAI
INIT# Input High Voltage
INIT# Input Low Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
DD
DD
Current
Current
DD
Current
Parameter
Power-up to Read Operation
Power-up to Write Operation
Description
I/O Pin Capacitance
Input Capacitance
Pin Inductance
(V
DD
=3.3V, T
A
=25 °C, f=1 Mhz, other pins open)
0.5 V
0.9 V
Min
-0.5
-0.5
8.5
1.1
DD
DD
25
Limits
V
V
0.3 V
0.1 V
DD
DD
Max
100
200
200
9.5
0.4
18
60
10
40
1
1
+0.5
+0.5
DD
DD
Test Condition
Units
Minimum
V
V
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
I/O
IN
100
100
=0V
=0V
Test Conditions
LCLK
All other inputs=V
All outputs = open, V
LCLK
LFRAME#=.9V
V
All other inputs ≥ 0.9 V
LCLK
LFRAME#=V
All other inputs ≥ 0.9 V
V
V
V
V
V
V
V
I
I
OL
OH
OUT
DD
IN
IN
DD
DD
DD
DD
=1500 µA, V
=GND to V
=GND to V
=-500 µA, V
=V
=V
=V
=V
=V
=GND to V
(LPC mode)
(LPC mode)
(LPC mode)
DD
DD
DD
DD
DD
Max
Max
Min
Min
Max
IL
DD
DD
, V
DD
DD
DD
DD
, V
, V
=V
=V
=V
DD
=V
IL
=V
, V
DD
DD
or V
=V
ILT
ILT
ILT
DD
DD
DD
DD
=V
=V
/V
/V
/V
DD
DD
DD
Maximum
=V
=V
Min
Min
IH
IHT
IHT
IHT
DD
DD
S71237-08-000
20 nH
12 pF
12 pF
Units
or ≤ 0.1 V
Max
or ≤ 0.1 V
DD
DD
µs
µs
Max
Max
at
Max
Max
Data Sheet
DD
DD
T20.1 1237
T21.0 1237
T22.0 1237
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