VS-30ETH06STRLPBF Vishay Semiconductors, VS-30ETH06STRLPBF Datasheet

no-image

VS-30ETH06STRLPBF

Manufacturer Part Number
VS-30ETH06STRLPBF
Description
Rectifiers Hyperfast 600V 30A
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-30ETH06STRLPBF

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.6 V
Recovery Time
35 ns
Forward Continuous Current
30 A
Max Surge Current
200 A
Reverse Current Ir
50 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
800
Part # Aliases
30ETH06STRLPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VS-30ETH06STRLPBF
Manufacturer:
VISHAY
Quantity:
3 400
Part Number:
VS-30ETH06STRLPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Revision: 10-Oct-11
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
TO-220AC
Package
T
t
V
rr
J
I
F
F(AV)
V
(typ.)
max.
at I
R
www.vishay.com
F
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
Hyperfast Rectifier, 30 A FRED Pt
V
V
C
V
L
I
BR
R
R
F
S
T
,
Cathode
TO-220AC
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
Single die
R
F
F
J
R
R
1
175 °C
cathode
= 30 A
= 30 A, T
2.60 V
= 100 μA
600 V
23 ns
= 150 °C, V
30 A
= V
= 600 V
Base
J
R
= 25 °C unless otherwise specified)
2
Anode
SYMBOL
rated
T
V
J
I
I
F(AV)
J
FSM
, T
3
RRM
= 150 °C
TEST CONDITIONS
Stg
R
= V
R
rated
T
T
C
J
TEST CONDITIONS
= 25 °C
1
= 103 °C
VS-30ETH06PbF, VS-30ETH06-N3
FEATURES
• Reduced Q
• 175 °C T
• For PFC CRM/CCM operation
• Low forward voltage drop
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed
• Halogen-free according to IEC 61249-2-21
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
JEDEC-JESD47
definition (-N3 only)
J
www.vishay.com/doc?91000
maximum
rr
and
and soft recovery
MIN.
600
qualified
-
-
-
-
-
-
Vishay Semiconductors
- 65 to 175
VALUES
600
200
30
®
DiodesEurope@vishay.com
TYP.
1.34
2.0
0.3
8.0
60
33
-
according
Document Number: 94019
MAX.
1.75
500
2.6
50
-
-
-
UNITS
to
°C
A
V
UNITS
nH
μA
pF
V

Related parts for VS-30ETH06STRLPBF

VS-30ETH06STRLPBF Summary of contents

Page 1

... L S Revision: 10-Oct-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-30ETH06PbF, VS-30ETH06-N3 FEATURES • Reduced Q Base cathode • 175 °C T maximum ...

Page 2

... Marking device Revision: 10-Oct-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-30ETH06PbF, VS-30ETH06- °C unless otherwise specified) J TEST CONDITIONS / A/μ ...

Page 3

... V - Forward Voltage Drop (V) F Fig Typical Forward Voltage Drop Characteristics 1000 Fig Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 Fig Maximum Thermal Impedance Z Revision: 10-Oct-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE ...

Page 4

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-30ETH06PbF, VS-30ETH06- 100 Fig Typical Reverse Recovery Time vs. dI 1200 V T 1000 T 800 600 400 200 100 Fig Typical Stored Charge vs /D) (see fig. 6); F(AV) ...

Page 5

... F through 0.75 I extrapolated to zero current. Revision: 10-Oct-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-30ETH06PbF, VS-30ETH06- 200 V R 0.01 Ω μH D.U.T. D ...

Page 6

... VS-30ETH06-N3 50 Dimensions Part marking information SPICE model Revision: 10-Oct-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-30ETH06PbF, VS-30ETH06- ...

Page 7

... H1 0.068 L 0.068 4 L1 0.024 L3 0.022 4 L4 0.600 3 Ø P 0.355 Q  0.507 6 0.414 3, 6 Outline Dimensions Vishay Semiconductors Thermal pad D2 ( Detail B Lead tip E1 (6) Lead assignments Diodes Cathode 3 - Anode Conforms to JEDEC outline TO-220AC MILLIMETERS INCHES MIN. MAX. ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

Related keywords