IS61LF6436A-8.5TQLI ISSI, Integrated Silicon Solution Inc, IS61LF6436A-8.5TQLI Datasheet

IC SRAM 2MBIT 8.5NS 100TQFP

IS61LF6436A-8.5TQLI

Manufacturer Part Number
IS61LF6436A-8.5TQLI
Description
IC SRAM 2MBIT 8.5NS 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF6436A-8.5TQLI

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
2M (64K x 36)
Speed
8.5ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Density
2.25Mb
Access Time (max)
8.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
90MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
150mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
64K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1096
IS61LF6436A-8.5TQLI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LF6436A-8.5TQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61LF6436A-8.5TQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
64K x 32, 64Kx36
SYNCHRONOUS FLOW-THROUGH
STATIC RAM
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
08/25/05
IS61LF6436A
IS61LF6432A
FAST ACCESS TIME
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
• Interleaved or linear burst sequence control
• Three chip enables for simple depth expansion
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin TQFP package
• Power Supply:
• Control pins mode upon power-up:
• Industrial Temperature Available:
• Lead-free available
control
using MODE input
and address pipelining
+3.3V V
+3.3V or 2.5V V
– MODE in interleave burst mode
– ZZ in normal operation mode
(-40
Symbol
t
t
KQ
KC
o
C to +85
DD
o
C)
DDQ
Parameter
Clock Access Time
Cycle Time
Frequency
8.5
8.5
11
90
DESCRIPTION
The
low-power synchronous static RAM designed to provide a
burstable, high-performance, memory. IS61LF6432A is
organized as 65,536 words by 32 bits. IS61LF6436A is
organized as 65,536 words by 36 bits. They are fabricated
with
grates a 2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single monolithic circuit.
All synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BWa controls DQa, BWb controls DQb, BWc controls DQc,
BWd controls DQd, conditioned by BWE being LOW. A
LOW on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IS61LF6432A/36A and controlled by the
ADV (burst address advance) input pin.
The mode pin is used to select the burst sequence order.
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
ISSI
ISSI
IS61LF6432A and IS61LF6436A are high-speed,
's advanced CMOS technology. The device inte-
MHz
Unit
ns
ns
ISSI
OCTOBER 2005
®
1

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IS61LF6436A-8.5TQLI Summary of contents

Page 1

... ISSI The IS61LF6432A and IS61LF6436A are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS61LF6432A is organized as 65,536 words by 32 bits. IS61LF6436A is organized as 65,536 words by 36 bits. They are fabricated ISSI with 's advanced CMOS technology. The device inte- grates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit ...

Page 2

... IS61LF6436A IS61LF6432A BLOCK DIAGRAM CLK ADV ADSC ADSP 17/ BWE BW(a-d) x32/x36: a-d CE CE2 CE2 OE 2 MODE A0' Q0 CLK BINARY COUNTER A1 CLR MEMORY ARRAY A0 ADDRESS REGISTER CE CLK 32 DQ(a-d) BYTE WRITE REGISTERS CLK 4 INPUT D Q REGISTERS ENABLE REGISTER CLK CE CLK Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI 64Kx32 ...

Page 3

... IS61LF6436A IS61LF6432A PIN CONFIGURATION 100-Pin TQFP 100 DQc DQc 3 4 VDDQ 5 Vss 6 DQc DQc 7 8 DQc 9 DQc 10 Vss VDDQ 11 12 DQc 13 DQc 14 NC VDD Vss DQd 18 19 DQd 20 VDDQ 21 Vss DQd 22 23 DQd 24 DQd 25 DQd Vss 26 27 VDDQ 28 DQd DQd 29 30 ...

Page 4

... IS61LF6436A IS61LF6432A PIN CONFIGURATION 100-Pin TQFP 100 DQPc 1 2 DQc 3 DQc VDDQ 4 5 Vss 6 DQc 7 DQc DQc 8 9 DQc 10 Vss VDDQ 11 12 DQc 13 DQc 14 NC VDD Vss 18 DQd DQd 19 20 VDDQ 21 Vss DQd 22 23 DQd 24 DQd 25 DQd Vss 26 27 VDDQ 28 DQd ...

Page 5

... IS61LF6436A IS61LF6432A TRUTH TABLE Address Operation Used Deselected, Power-down None Deselected, Power-down None Deselected, Power-down None Deselected, Power-down None Deselected, Power-down None Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst External Read Cycle, Continue Burst ...

Page 6

... IS61LF6436A IS61LF6432A INTERLEAVED BURST ADDRESS TABLE (MODE = V External Address 1st Burst Address 0,0 A1', A0' = 1,1 1,0 ABSOLUTE MAXIMUM RATINGS Symbol Parameter T Storage Temperature STG P Power Dissipation D I Output Current (per I/O) OUT Voltage Relative to Vss for I/O Pins IN OUT V Voltage Relative to Vss for ...

Page 7

... IS61LF6436A IS61LF6432A OPERATING RANGE Range Ambient Temperature Industrial –40°C to +85°C DC ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current LI I Output Leakage Current LO POWER SUPPLY CHARACTERISTICS ...

Page 8

... IS61LF6436A IS61LF6432A CAPACITANCE (1,2) Symbol Parameter C Input Capacitance IN C Input/Output Capacitance OUT Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions 25° MHz 3.3V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times ...

Page 9

... IS61LF6436A IS61LF6432A 2.5V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load 2.5V I/O OUTPUT LOAD EQUIVALENT Output Figure 3 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 08/25/05 Unit 0V to 2.5V 1ns 1 ...

Page 10

... IS61LF6436A IS61LF6432A READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) Symbol Parameter (3) f Clock Frequency MAX (3) t Cycle Time KC t Clock High Time KH t (3) Clock Low Time KL t (3) Clock Access Time KQ (1) t Clock High to Output Invalid KQX (1,2) t Clock High to Output Low-Z ...

Page 11

... IS61LF6436A IS61LF6432A READ/WRITE CYCLE TIMING t KC CLK ADSP t SS ADSC ADV Address RD1 BWE BWd-BWa t t CES CEH CES CEH CE2 t t CES CEH CE2 OE High-Z DATA OUT 1a t KQLZ t KQ High-Z DATA IN Single Read Flow-through Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...

Page 12

... IS61LF6436A IS61LF6432A WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) Symbol Parameter (1) t Cycle Time KC t (1) Clock High Time KH (1) t Clock Low Time KL t (1) Address Setup Time AS (1) t Address Status Setup Time SS t (1) Write Setup Time WS (1) t Data In Setup Time DS t (1) Chip Enable Setup Time ...

Page 13

... IS61LF6436A IS61LF6432A WRITE CYCLE TIMING CLK ADSP ADSC ADV must be inactive for ADSP Write ADV WR1 BWE t WS BWd-BWa WR1 t t CES CEH CES CEH CE2 t t CES CEH CE2 OE High-Z DATA OUT t DS High-Z DATA 1a IN Single Write Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...

Page 14

... IS61LF6436A IS61LF6432A SNOOZE MODE ELECTRICAL CHARACTERISTICS Symbol Parameter I Current during SNOOZE MODE active to input ignored PDS t ZZ inactive to input sampled PUS t ZZ active to SNOOZE current ZZI t ZZ inactive to exit SNOOZE current RZZI SNOOZE MODE TIMING CLK t PDS ZZ setup cycle ZZ t ZZI ...

Page 15

... IS61LF6436A IS61LF6432A ORDERING INFORMATION 3.3V I/O OR 2.5V I/O Industrial Range: -40°C TO +85°C Speed (ns) Order Part No. 8.5 IS61LF6432A-8.5TQI IS61LF6432A-8.5TQLI 8.5 IS61LF6436A-8.5TQI IS61LF6436A-8.5TQLI Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 08/25/05 ISSI Package TQFP TQFP, Lead-free TQFP TQFP, Lead-free ® 15 ...

Page 16

PACKAGING INFORMATION TQFP (Thin Quad Flat Pack Package) Package Code Thin Quad Flat Pack (TQ) Millimeters Inches Symbol Min Max Min Ref. Std. No. Leads (N) 100 A — 1.60 — A1 0.05 0.15 ...

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