CY7C1315JV18-300BZC Cypress Semiconductor Corp, CY7C1315JV18-300BZC Datasheet - Page 21

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CY7C1315JV18-300BZC

Manufacturer Part Number
CY7C1315JV18-300BZC
Description
IC SRAM SYNC 18KB QDR2 165LFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1315JV18-300BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
18M (512K x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1315JV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-12562 Rev. *D
V
V
V
V
V
V
V
V
I
I
V
I
I
17. Power up: Assumes a linear ramp from 0V to V
18. Output are impedance controlled. I
19. Output are impedance controlled. I
20. V
21. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
SB1
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[21]
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power down
Current
DD
[13]
Operating Supply
DD
DDQ
.............................. –0.5V to V
Description
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[14]
, whichever is larger, V
OH
OL
= (V
=
(V
DDQ
DDQ
[20]
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
(min) within 200 ms. During this time V
Note 18
Note 19
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
Max V
Both Ports Deselected,
V
f = f
Static
OH
OL
OUT
DD
IN
REF
MAX
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
≥ V
= Max,
= 0 mA,
DDQ
DD
(max) = 0.95V or 0.54V
DD
IH
= 1/t
= 1/t
I
I
,
or V
+ 0.3V
+ 0.3V
≤ V
≤ V
CYC
Test Conditions
CYC
DDQ
DDQ,
IN
DD
, Inputs
≤ V
Output Disabled
IL
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current ................................................... > 200 mA
Operating Range
DDQ
Commercial
Industrial
300 MHz
250 MHz
300 MHz
250 MHz
, whichever is smaller.
IH
Range
< V
DD
CY7C1313JV18/CY7C1315JV18
CY7C1311JV18/CY7C1911JV18
and V
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
V
V
–40°C to +85°C
< V
DDQ
DDQ
0°C to +70°C
V
V
DDQ
REF
DD
Ambient
–0.3
0.68
Min
V
.
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
SS
+ 0.1
– 0.2
A
0.75
Typ
)
1.8
1.5
1.8 ± 0.1V
V
V
V
DD
DDQ
DDQ
V
V
DDQ
REF
[17]
V
Max
0.95
V
730
735
790
895
665
675
705
830
265
275
325
435
250
250
290
325
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 21 of 27
V
1.4V to
DDQ
V
DD
Unit
mA
mA
mA
mA
[17]
μA
μA
V
V
V
V
V
V
V
V
V
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