CY7C1413AV18-200BZC Cypress Semiconductor Corp, CY7C1413AV18-200BZC Datasheet - Page 16
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CY7C1413AV18-200BZC
Manufacturer Part Number
CY7C1413AV18-200BZC
Description
IC SRAM 36MBIT 200MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1413AV18-200BZC.pdf
(28 pages)
Specifications of CY7C1413AV18-200BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (2M x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1413AV18-200BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document Number: 38-05614 Rev. *C
TAP AC Switching Characteristics
TAP Timing and Test Conditions
Identification Register Definitions
Output Times
t
t
Revision Number
(31:29)
Cypress Device ID
(28:12)
Cypress JEDEC
ID (11:1)
ID Register
Presence (0)
Instruction Field
TDOV
TDOX
Parameter
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data-In
TDI
Test Data-Out
TDO
Z
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
0
= 50Ω
11010011011000111 11010011011001111 11010011011010111 11010011011100111 Defines the
(a)
CY7C1411AV18
00000110100
GND
0.9V
000
1
C
50Ω
L
= 20 pF
[14]
Over the Operating Range
CY7C1426AV18
00000110100
Description
t
TMSS
000
t
TDIS
1
t
TH
Value
0V
t
CY7C1413AV18
TDOV
t
TL
00000110100
t
t
TMSH
TDIH
[13, 14]
000
1
(continued)
1.8V
t
TCYC
t
TDOX
ALL INPUT PULSES
0.9V
CY7C1415AV18
00000110100
Min.
000
0
1
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
CY7C1411AV18
Max.
10
Version
number.
type of SRAM.
Allows unique
identification of
SRAM vendor.
Indicates the
presence of an
ID register.
Page 16 of 28
Description
Unit
ns
ns
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