CY7C1418BV18-167BZC Cypress Semiconductor Corp, CY7C1418BV18-167BZC Datasheet - Page 18

• Manufacturer Part Number: CY7C1418BV18-167BZC
• Description: IC SRAM 36MBIT 167MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1418BV18-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (2M x 18)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with Power Applied –55 C to +125 C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ......... –0.5V to V
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-07033 Rev. *H
V
V
V
V
V
V
V
V
I
I
V
I
15. Power up: assumes a linear ramp from 0V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
19. The operation current is calculated with 50% read cycle and 50% write cycle.
Commercial
Industrial
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[19]
Range
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
DD
[11]
Temperature (T
Operating Supply
–40°C to +85°C
0 C to +70 C
DD
DDQ
.............................. –0.5V to V
Description
Ambient
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
= –(V
A
)
DDQ
DDQ
[18]
1.8 ± 0.1V
DD
/2)/(RQ/5) for values of 175 < RQ < 350.
V
/2)/(RQ/5) for values of 175 < RQ < 350.
(min) within 200 ms. During this time V
DD
Note 16
Note 17
I
I
GND  V
GND  V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
[15]
REF
= 0.1 mA, Nominal Impedance
=0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
(max) = 0.95V or 0.54V
DDQ
DD
= 1/t
V
I
I
1.4V to
+ 0.3V
+ 0.3V
 V
 V
DDQ
V
Test Conditions
CYC
DD
DDQ
DDQ,
DD
[15]
Output Disabled
DDQ
Neutron Soft Error Immunity
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 
cation Note
Terrestrial Failure Rates”
267 MHz (x18)
250 MHz (x18)
200 MHz (x18)
167 MHz (x18)
Parameter
, whichever is smaller.
IH
< V
DD
2
, 95% confidence limit calculation. For more details refer to Appli-
AN54908 “Accelerated Neutron SER Testing and Calculation of
and V
(x36)
(x36)
(x36)
(x36)
Single Event
Description
DDQ
Single-Bit
Multi-Bit
Latchup
Logical
Upsets
Logical
Upsets
V
V
< V
DDQ
DDQ
V
V
DD
DDQ
REF
–0.3
0.68
.
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
5
5
SS
+ 0.1
– 0.2
Test Con-
ditions
25°C
25°C
85°C
0.75
Typ
1.8
1.5
CY7C1418BV18
CY7C1420BV18
V
V
Typ
320
DDQ
DDQ
V
V
0
0
DDQ
REF
V
Max
0.95
V
835
910
760
825
620
675
525
570
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 18 of 27
Max*
0.01
368
0.1
Unit
Unit
FIT/
FIT/
FIT/
Dev
mA
Mb
Mb
A
A
V
V
V
V
V
V
V
V
V
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