CY7C1515JV18-300BZC Cypress Semiconductor Corp, CY7C1515JV18-300BZC Datasheet - Page 21
![no-image](/images/manufacturer_photos/0/1/179/cypress_semiconductor_corp_sml.jpg)
CY7C1515JV18-300BZC
Manufacturer Part Number
CY7C1515JV18-300BZC
Description
IC SRAM 72MBIT 300MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1513JV18-300BZXC.pdf
(27 pages)
Specifications of CY7C1515JV18-300BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (2M x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1515JV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.... –10°C to +85°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
AC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-12560 Rev. *C
V
V
V
V
V
V
V
V
I
I
V
I
I
V
V
17. Power up: Assumes a linear ramp from 0V to V
18. Output are impedance controlled. I
19. Output are impedance controlled. I
20. V
X
OZ
DD
SB1
Parameter
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power down
Current
Input HIGH Voltage
Input LOW Voltage
DD
[13]
Operating Supply
DD
DDQ
.............................. –0.5V to V
Description
Description
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[14]
[13]
, whichever is larger, V
OH
OL
= (V
=
−
(V
DDQ
DDQ
[20]
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
(min) within 200 ms. During this time V
Note 18
Note 19
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
Max V
Both Ports Deselected,
V
f = f
OH
OL
OUT
DD
IN
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
≥ V
MAX
= Max,
= 0 mA,
DDQ
DD
(max) = 0.95V or 0.54V
DD
IH
= 1/t
= 1/t
I
I
,
or V
+ 0.3V
+ 0.3V
≤ V
≤ V
Test Conditions
Test Conditions
CYC
CYC
DDQ
DDQ,
IN
DD
≤ V
, Inputs Static
Output Disabled
IL
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current ................................................... > 200 mA
Operating Range
DDQ
Commercial
Industrial
, whichever is smaller.
IH
Range
< V
DD
CY7C1513JV18, CY7C1515JV18
CY7C1511JV18, CY7C1526JV18
and V
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
V
V
–40°C to +85°C
< V
DDQ
DDQ
0°C to +70°C
V
V
V
DDQ
REF
REF
DD
Ambient
–0.3
0.68
Min
V
Min
.
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
–
SS
+ 0.1
+ 0.2
– 0.2
A
0.75
Typ
Typ
)
1.8
1.5
–
–
1.8 ± 0.1V
V
V
V
DD
DDQ
DDQ
V
V
V
DDQ
REF
REF
[17]
V
1090
1090
1115
1140
Max
0.95
Max
V
405
405
405
405
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
–
– 0.1
– 0.2
+ 0.3
Page 21 of 27
V
1.4V to
DDQ
V
DD
Unit
Unit
mA
mA
[17]
μA
μA
V
V
V
V
V
V
V
V
V
V
V
[+] Feedback