VS-SD400C16C Vishay Semiconductors, VS-SD400C16C Datasheet - Page 2

• Manufacturer Part Number: VS-SD400C16C
• Description: Rectifiers 1600 Volt 800 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-SD400C16C

• Product Category: Rectifiers
• Rohs: yes
• Product: Standard Recovery Rectifiers
• Configuration: Single
• Reverse Voltage: 1600 V
• Forward Voltage Drop: 1.86 V at 1930 A
• Forward Continuous Current: 800 A
• Max Surge Current: 8640 A
• Reverse Current Ir: 15000 uA
• Mounting Style: Screw
• Package / Case: DO-200AA
• Maximum Operating Temperature: + 190 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

SD400C..C Series
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance R
www.vishay.com
2
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJ-hs
180°
120°
90°
60°
30°
2
2
t for fusing
√t for fusing
CONDUCTION
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.017
0.020
0.025
0.037
0.064
SYMBOL
SYMBOL
For technical questions, contact: [e-mail]
V
V
I
R
F(RMS)
I
I
T
F(AV)
F(TO)1
F(TO)2
V
I
thJ-hs
FSM
T
I
2
r
r
Stg
2
f1
f2
FM
√t
J
t
(Hockey PUK Version), 800 A
DOUBLE SIDE
Standard Recovery Diodes
DC operation single side cooled
DC operation double side cooled
See dimensions - link on page 5
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
pk
0.018
0.020
0.025
0.036
0.062
= 1930 A, T
F(AV)
F(AV)
thJ-hs
), T
), T
J
F(AV)
F(AV)
when devices operate at different conduction angles than DC
= T
RECTANGULAR CONDUCTION
SINGLE SIDE
No voltage
reapplied
50 % V
reapplied
No voltage
reapplied
50 % V
reapplied
J
J
TEST CONDITIONS
TEST CONDITIONS
= T
= T
J
< I < π x I
< I < π x I
maximum, t
0.011
0.020
0.027
0.038
0.065
J
J
maximum
maximum
RRM
RRM
F(AV)
F(AV)
p
= 10 ms sinusoidal wave
Sinusoidal half wave,
initial T
), T
), T
DOUBLE SIDE
J
J
= T
= T
0.012
0.020
0.027
0.038
0.062
J
J
J
= T
maximum
maximum
J
maximum
TEST CONDITIONS
T
J
= T
- 40 to 190
- 55 to 200
4900 (500)
800 (425)
VALUES
VALUES
J
55 (85)
Document Number: 93547
0.163
0.073
maximum
1435
8250
8640
6940
7265
3400
0.80
0.83
0.55
0.53
1.86
340
311
241
220
70
DO-200AA
Revision: 05-Mar-08
UNITS
UNITS
N (kg)
kA
kA
K/W
mΩ
UNITS
°C
°C
A
A
V
V
g
K/W
2
2
√s
s