VS-8EWH06FNTRHM3 Vishay Semiconductors, VS-8EWH06FNTRHM3 Datasheet

VS-8EWH06FNTRHM3

Manufacturer Part Number

VS-8EWH06FNTRHM3

Description

Rectifiers 8 Amp 600 Volt

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-8EWH06FNHM3.pdf (7 pages)

Specifications of VS-8EWH06FNTRHM3

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

2.4 V

Recovery Time

22 ns

Forward Continuous Current

8 A

Max Surge Current

90 A

Reverse Current Ir

50 uA

Mounting Style

SMD/SMT

Package / Case

D-PAK

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 65 C

Tradename

FRED Pt

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Revision: 02-Aug-12

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

ELECTRICAL SPECIFICATIONS (T

PARAMETER

Breakdown voltage,

blocking voltage

Forward voltage

Reverse leakage current

Junction capacitance

Series inductance

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

D-PAK (TO-252AA)

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

Diode variation

Package

F(AV)

(typ.)

max.

at I

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Hyperfast Rectifier, 8 A FRED Pt

SYMBOL

D-PAK (TO-252AA)

N/C

Single die

175 °C

600 V

18 ns

2.4 V

8 A

2, 4

Measured lead to lead 5 mm from package body

Anode

= 25 °C unless otherwise specified)

SYMBOL

= 8 A

= 8 A, T

= 100 μA

= 150 °C, V

= V

= 600 V

F(AV)

FSM

, T

RRM

Stg

rated

= 150 °C

TEST CONDITIONS

= V

= 25 °C

= 143 °C, f = 20 kHz, d = 50 %

= 143 °C

rated

TEST CONDITIONS

FEATURES

• Hyperfast recovery time, reduced Q

• 175

• For PFC CRM/CCM operation

• Low forward voltage drop

• Low leakage current

• AEC-Q101 qualified

• Meets JESD 201 class 1A whisker test

• Meets MSL level 1, per J-STD-020, LF maximum peak of

• Material categorization: For definitions of compliance

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce

over dissipation in the switching element and snubbers.

recovery

temperature

260 °C

please see

°C

www.vishay.com/doc?91000

www.vishay.com/doc?99912

maximum

VS-8EWH06FNHM3

Vishay Semiconductors

MIN.

600

operating

- 65 to 175

DiodesEurope@vishay.com

VALUES

600

TYP.

2.0

1.3

Document Number: 94739

and soft

junction

MAX.

500

2.4

1.8

UNITS

°C

UNITS

μA

Related parts for VS-8EWH06FNTRHM3

VS-8EWH06FNTRHM3 Summary of contents

Page 1

... rated 150 ° rated 600 Measured lead to lead 5 mm from package body S 1 VS-8EWH06FNHM3 Vishay Semiconductors ® and soft rr maximum operating junction www.vishay.com/doc?99912 VALUES UNITS 600 175 MIN. TYP. MAX. 600 - - - 2 ...

Page 2

... 125 ° A ° /dt = 200 A/μs 125 ° 390 ° 125 °C J TEST CONDITIONS Stg Case style D-PAK 2 VS-8EWH06FNHM3 Vishay Semiconductors MIN. TYP. MAX 3 4 MIN. TYP. MAX. ...

Page 3

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1000 100 10 0.1 0.01 0.001 100 10 (V) F Fig Typical Junction Capacitance vs. Reverse Voltage Single Pulse (Thermal Resistance) 1E-04 1E-03 1E- Rectangular Pulse Duration (Seconds) 1 thJC 3 VS-8EWH06FNHM3 Vishay Semiconductors Tj = 175° ...

Page 4

... Revision: 02-Aug-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH (A) F (AV) Fig Typical Reverse Recovery Time (A) ...

Page 5

... F ( area under curve defined and I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions 5 VS-8EWH06FNHM3 Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM ...

Page 6

... ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWH06FNHM3 VS-8EWH06FNTRHM3 VS-8EWH06FNTRRHM3 VS-8EWH06FNTRLHM3 Dimensions Part marking information Packaging information Revision: 02-Aug-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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