VS-HFA25TB60STRLP Vishay Semiconductors, VS-HFA25TB60STRLP Datasheet

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VS-HFA25TB60STRLP

Manufacturer Part Number
VS-HFA25TB60STRLP
Description
Rectifiers 600 Volt 25 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-HFA25TB60STRLP

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.7 V
Recovery Time
75 ns
Forward Continuous Current
25 A
Max Surge Current
225 A
Reverse Current Ir
20 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
800
Revision: 27-Aug-12
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
Package
T
t
V
rr
J
I
F
F(AV)
V
(typ.)
max.
at I
R
www.vishay.com
F
N/C
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1
cathode
D
Base
2
PAK
Ultrafast Soft Recovery Diode, 25 A
2
Anode
3
TO-263AB (D
Single die
150 °C
600 V
23 ns
1.7 V
25 A
2
PAK)
SYMBOL
T
J
I
I
HEXFRED
FSM
FRM
, T
P
V
I
F
R
D
Stg
T
T
T
1
C
C
C
TEST CONDITIONS
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
• AEC-Q101 qualified
• Material categorization:
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
b
peak of 260 °C
For definitions of compliance please see
www.vishay.com/doc?99912
portion of recovery. The HEXFRED features combine to
®
www.vishay.com/doc?91000
RRM
and Q
VS-HFA25TB60SPbF
rr
Vishay Semiconductors
- 55 to + 150
VALUES
DiodesEurope@vishay.com
600
225
100
125
25
50
Document Number: 94066
®
product line features
UNITS
°C
W
A
V
RRM
) and

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VS-HFA25TB60STRLP Summary of contents

Page 1

... Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION VS-HFA25TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance 2 PAK) which is unsurpassed by any rectifier previously available ...

Page 2

... ° 200 125 °C J /dt1 °C J /dt2 T = 125 °C J TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount 2 Case style D PAK 2 VS-HFA25TB60SPbF Vishay Semiconductors MIN. TYP. MAX. 600 - - - 1.3 1.7 See fig 1.5 2.0 - 1.3 1.7 - 1.5 20 See fig 600 2000 See fig. 3 ...

Page 3

... 0.1 0.01 2.2 2.6 94066_02 Fig Typical Reverse Current vs. Reverse Voltage 1000 °C J 100 100 V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.001 0. Rectangular Pulse Duration (s) 1 thJC 3 VS-HFA25TB60SPbF Vishay Semiconductors T = 150 ° 125 ° ° ...

Page 4

... T = 125 °C J 120 °C J 100 100 dI /dt (A/μs) 94066_05 F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/μ ...

Page 5

... F ( area under curve defined and I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions 5 VS-HFA25TB60SPbF Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM ...

Page 6

... Packaging information ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE VS-HFA25TB60SPBF VS-HFA25TB60STRRP VS-HFA25TB60STRLP Revision: 27-Aug-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT HF ...

Page 7

... E 9.65 0.039 E1 7.90 0.035 4 e 0.070 H 14.61 0.068 4 L 1.78 0.029 L1 0.023 4 L2 1.27 0.065 L3 0.380 2 L4 4.78 DiodesEurope@vishay.com This document is subject to change without notice. Outline Dimensions Vishay Semiconductors Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) (D1) (3) 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 2.32 MIN. (0.08) 2.64 (0.103) (3) 2.41 (0.096) Base Plating (4) Metal b1, b3 (4) ( Seating ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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