VS-HFA15TB60SPBF Vishay Semiconductors, VS-HFA15TB60SPBF Datasheet

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VS-HFA15TB60SPBF

Manufacturer Part Number
VS-HFA15TB60SPBF
Description
Rectifiers 600 Volt 15 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-HFA15TB60SPBF

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2 V at 30 A
Recovery Time
60 ns
Forward Continuous Current
15 A
Max Surge Current
150 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
1000
Revision: 10-Jun-11
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
VS-HFA15 TB60SPbF
N/C
Package
T
t
V
rr
J
I
F
1
F(AV)
V
(typ.)
cathode
max.
at I
D
R
Base
2
www.vishay.com
PAK
F
2
Anode
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3
Ultrafast Soft Recovery Diode, 15 A
TO-263AB (D
VS-HFA15 TB60-1PbF
N/C
1
TO-262
Single die
150 °C
600 V
23 ns
1.7 V
2
15 A
2
PAK), TO-262AA
Anode
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF
3
SYMBOL
T
HEXFRED
J
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
1
T
T
T
C
C
C
TEST CONDITIONS
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Meets MSL level 1, per J-STD-020, LF maximum
• Halogen-free according to IEC61249-2-21
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of
the art ultrafast recovery diode. Employing the latest in
epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and
15 A continuous current, the VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink
VS-HFA15TB60-1PbF is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
peak of 260 °C
definition
®
,
sizes.
www.vishay.com/doc?91000
RRM
and Q
The
rr
Vishay Semiconductors
HEXFRED
- 55 to + 150
VALUES
DiodesEurope@vishay.com
600
150
15
60
74
29
Document Number: 94054
®
VS-HFA15TB60SPbF,
product line features
UNITS
°C
W
V
A
RRM
) and
b

Related parts for VS-HFA15TB60SPBF

VS-HFA15TB60SPBF Summary of contents

Page 1

... V result in performance which is unsurpassed by any rectifier 1.7 V previously available. With basic ratings of 600 V and 15 A continuous current, the VS-HFA15TB60SPbF VS-HFA15TB60-1PbF is especially well suited for use as the 150 °C companion diode for IGBTs and MOSFETs. In addition to ...

Page 2

... Marking device Revision: 10-Jun-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF = 25 °C unless otherwise specified) J TEST CONDITIONS I = 100 μA ...

Page 3

... Fig Maximum Thermal Impedance Z Revision: 10-Jun-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF 10 000 1000 100 10 1 0.1 0. ...

Page 4

... F Fig Typical Recovery Current vs. dI Revision: 10-Jun-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF 800 = 30 A 700 = 600 ...

Page 5

... F through 0.75 I extrapolated to zero current. Revision: 10-Jun-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF V = 200 V R 0.01 Ω μH D.U.T. D ...

Page 6

... Part marking information Packaging information SPICE model Revision: 10-Jun-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF ...

Page 7

... E 9.65 0.039 E1 7.90 0.035 4 e 0.070 H 14.61 0.068 4 L 1.78 0.029 L1 0.023 4 L2 1.27 0.065 L3 0.380 2 L4 4.78 DiodesEurope@vishay.com This document is subject to change without notice. Outline Dimensions Vishay Semiconductors Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) (D1) (3) 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 2.32 MIN. (0.08) 2.64 (0.103) (3) 2.41 (0.096) Base Plating (4) Metal b1, b3 (4) ( Seating ...

Page 8

... Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline Outline Dimensions Vishay Semiconductors E D1 (3) (3) E1 Section Base (4) Plating metal b1 (4) (b, b2) ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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